US Patent Application 18447855. SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yen-Chieh Huang of Tainan City (TW)
Wei-Yuan Lu of Taipei City (TW)
Feng-Cheng Yang of Hsinchu County (TW)
Yen-Ming Chen of Hsin-Chu (TW)
SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447855 titled 'SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor device and a method of manufacturing it.
- The semiconductor device includes a fin structure on a substrate, a gate structure, and a source/drain feature.
- The fin structure has a channel region and a source/drain region.
- The gate structure is positioned over the channel region of the fin structure.
- The source/drain feature is grown epitaxially in the source/drain region of the fin structure.
- The source/drain feature consists of a top epitaxial layer and a lower epitaxial layer.
- The lower epitaxial layer has a wavy top surface.
- The contact of the semiconductor device has a wavy bottom surface that matches the wavy top surface of the lower epitaxial layer.
- The contact is engaged with the lower epitaxial layer of the source/drain feature.
Original Abstract Submitted
A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.