US Patent Application 18231254. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE WITH BONDING STRUCTURE simplified abstract
Contents
METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE WITH BONDING STRUCTURE
Organization Name
Inventor(s)
TZU-CHING Tsai of TAIPEI CITY (TW)
METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE WITH BONDING STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18231254 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE WITH BONDING STRUCTURE
Simplified Explanation
The patent application describes a circuit device with two substrates and barrier layers made of aluminum fluoride.
- The circuit device includes a first substrate with a first barrier layer and a second substrate with a second barrier layer.
- There are two conductive portions, one on each substrate, and they are covered by expanding pads.
- The first expanding pad is on the first conductive portion and has a larger contact area than the conductive portion.
- The second expanding pad is bonded to the first expanding pad and is on the second conductive portion, also with a larger contact area.
- The purpose of the expanding pads is to provide a larger contact area for improved connectivity.
- The use of aluminum fluoride in the barrier layers enhances the performance and durability of the circuit device.
Original Abstract Submitted
A circuit device includes: a first substrate having a first barrier layer; a second substrate having a second barrier layer; a first conductive portion arranged over the first barrier layer; a second conductive portion arranged over the second barrier layer; a first expanding pad arranged on the first conductive portion and including a first contact area greater than that of the first conductive portion; and a second expanding pad bonded to the first expanding pad, arranged on the second conductive portion and including a second expanded contact area greater than that of the second conductive portion. The first barrier layer and the second barrier layer include aluminum fluoride.