US Patent Application 17726965. DEPOSITING A STORAGE NODE simplified abstract
Contents
DEPOSITING A STORAGE NODE
Organization Name
Inventor(s)
Ryan L. Meyer of Boise ID (US)
Kyle R. Knori of Boise ID (US)
DEPOSITING A STORAGE NODE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17726965 Titled 'DEPOSITING A STORAGE NODE'
Simplified Explanation
The abstract describes methods, apparatuses, and systems for depositing a storage node material. It explains that a semiconductor structure is formed, consisting of various layers such as silicate and nitride materials. Portions of the second nitride material are then removed, and a third silicate material is deposited over the remaining layers. An opening is formed through the semiconductor structure, and a storage node material is deposited within this opening.
Original Abstract Submitted
Methods, apparatuses, and systems related to depositing a storage node material are described. An example method includes forming a semiconductor structure including a support structure having a first silicate material over a bottom nitride material, a first nitride material over the first silicate material, a second silicate material over the first nitride material, and a second nitride material over the second silicate material. The method further includes removing portions of the second nitride material. The method further includes depositing a third silicate material over the second nitride material and a portion of the second silicate material. The method further includes forming an opening through the semiconductor structure. The method further includes depositing a storage node material within the opening.
