Taiwan semiconductor manufacturing company, ltd. (20240138156). SEMICONDUCTOR DEVICE WITH STACKED MEMORY PERIPHERY AND ARRAY AND METHOD FOR FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE WITH STACKED MEMORY PERIPHERY AND ARRAY AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE WITH STACKED MEMORY PERIPHERY AND ARRAY AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE WITH STACKED MEMORY PERIPHERY AND ARRAY AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Han-Jong Chia of Hsinchu City (TW)
SEMICONDUCTOR DEVICE WITH STACKED MEMORY PERIPHERY AND ARRAY AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240138156 titled 'SEMICONDUCTOR DEVICE WITH STACKED MEMORY PERIPHERY AND ARRAY AND METHOD FOR FORMING THE SAME
Simplified Explanation
The abstract describes a patent application for semiconductor devices with vertically stacked dies, memory cells, and connection features.
- Memory cells arranged in rows and columns of a memory array
- First connection features connected to word lines of the memory array
- Second connection features connected to bit lines of the memory array
- Third connection features of the second die connected to first connection features
- Word line drivers of the second die connected to third connection features
- Fourth connection features of the second die connected to second connection features of the first die
- Sense amplifiers of the second die connected to fourth connection features
Potential Applications
The technology described in this patent application could be applied in:
- High-density memory modules
- Advanced computing systems
- Data storage devices
Problems Solved
This technology helps address issues related to:
- Increasing memory capacity in limited space
- Improving data processing speed
- Enhancing overall system performance
Benefits
The benefits of this technology include:
- Higher memory density
- Faster data access and retrieval
- Improved system efficiency
Potential Commercial Applications
The potential commercial applications of this technology could include:
- Memory chip manufacturing companies
- Computer hardware manufacturers
- Data center operators
Possible Prior Art
One possible prior art for this technology could be the development of 3D stacked memory modules in the semiconductor industry.
Unanswered Questions
How does this technology impact power consumption in devices?
The abstract does not provide information on the power efficiency of the semiconductor devices described. Further research or analysis would be needed to determine the impact on power consumption.
Are there any limitations to the scalability of this technology?
The abstract does not mention any limitations or constraints on the scalability of the vertically stacked dies. It would be important to investigate if there are any restrictions on expanding this technology to larger memory arrays or more complex systems.
Original Abstract Submitted
semiconductor devices are provided. first and second dies are vertically stacked. the first die includes a plurality of memory cells and a plurality of first and second connection features. the memory cells are arranged in rows and columns of a memory array. the first connection features are electrically connected to a plurality of word lines of the memory array. the second connection features are electrically connected to a plurality of bit lines of the memory array. each third connection feature of the second die is electrically connected to a respective first connection feature. each word line driver of the second die is electrically connected to a respective third connection feature. each fourth connection feature of the second die is electrically connected to a respective second connection feature of the first die. each sense amplifier of the second die is electrically connected to a respective fourth connection feature.