Samsung electronics co., ltd. (20240324221). MEMORY DEVICE simplified abstract

MEMORY DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Kohji Kanamori of Suwon-si (KR)

Seogoo Kang of Suwon-si (KR)

Kyungdong Kim of Suwon-si (KR)

Seunghyun Lee of Suwon-si (KR)

Jeehoon Han of Suwon-si (KR)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240324221 titled 'MEMORY DEVICE

The memory device described in the abstract consists of two cell array stacks with gate electrodes, channel structures, and pad portions connected to the gate electrodes. The second cell array stack is positioned on top of the first cell array stack, with pad portions overlapping in a step shape. A vertical contact passes through the pad portions and extension portions below them, extending in the first direction.

• Memory device with two cell array stacks
• Gate electrodes, channel structures, and pad portions in a step shape
• Overlapping pad portions in the first direction
• Vertical contact passing through pad portions and extension portions

Potential Applications: - Memory storage devices - Semiconductor technology - Integrated circuits

Problems Solved: - Efficient memory storage - Enhanced data retrieval speed - Improved semiconductor performance

Benefits: - Increased memory capacity - Faster data processing - Higher efficiency in semiconductor devices

Commercial Applications: Title: Advanced Memory Storage Technology for Semiconductor Industry This technology can be utilized in various commercial applications such as: - Computer hardware manufacturing - Data storage solutions - Semiconductor industry advancements

Prior Art: Readers can explore prior art related to memory devices, semiconductor technology, and integrated circuits to understand the evolution of this innovation.

Frequently Updated Research: Stay updated on the latest advancements in memory storage technology, semiconductor devices, and integrated circuit design to enhance your knowledge in this field.

Questions about Memory Device Technology: 1. How does the overlapping pad portions in the memory device contribute to its efficiency? 2. What are the potential challenges in implementing this advanced memory storage technology in commercial applications?

Original Abstract Submitted

a memory device is provided. the memory device includes a first cell array stack including first gate electrodes, a first channel structure, and first pad portions respectively connected to the first gate electrodes and having a step shape, a second cell array stack disposed on the first cell array stack and including second gate electrodes, a second channel structure, and second pad portions respectively connected to the second gate electrodes and having a step shape, wherein the second pad portions overlap the first pad portions in the first direction, and a vertical contact passing through any one of the first pad portions, first extension portions below the any one of the first pad portions, any one of the second pad portions, and second extension portions below the any one of the second pad portions, to extend in the first direction.