International business machines corporation (20240114807). HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL simplified abstract
Contents
- 1 HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
Organization Name
international business machines corporation
Inventor(s)
Victor W.C. Chan of Guilderland NY (US)
JIN PING Han of Yorktown Heights NY (US)
Samuel Sung Shik Choi of Ballston Lake NY (US)
Injo Ok of Loudonville NY (US)
HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240114807 titled 'HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
Simplified Explanation
The abstract describes an integrated circuit with a field effect transistor (FET) and a phase change memory (PCM) cell, where the PCM cell includes a heater positioned such that its bottom surface is at or below the top surface of the FET.
- The integrated circuit includes a field effect transistor (FET) and a phase change memory (PCM) cell.
- The PCM cell has a heater with its bottom surface at or below the top surface of the FET.
Potential Applications
This technology could be applied in:
- Memory storage devices
- Computing systems
- Consumer electronics
Problems Solved
This technology helps in:
- Improving memory storage efficiency
- Enhancing computing performance
- Reducing power consumption
Benefits
The benefits of this technology include:
- Faster data access and retrieval
- Higher data storage density
- Lower energy consumption
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Semiconductor industry
- Memory chip manufacturing
- Electronics hardware development
Possible Prior Art
One possible prior art could be the integration of FETs and PCM cells in memory devices for improved performance and efficiency.
Unanswered Questions
How does the positioning of the heater in relation to the FET improve the overall performance of the integrated circuit?
The abstract mentions that the bottom surface of the heater is at or below the top surface of the FET, but it does not explain how this specific positioning enhances the functionality of the integrated circuit.
Are there any specific design considerations or limitations associated with integrating FETs and PCM cells in this manner?
While the abstract describes the integration of FETs and PCM cells, it does not delve into any potential challenges or constraints that may arise during the design and implementation process.
Original Abstract Submitted
an integrated circuit includes a field effect transistor (fet) and a phase change memory (pcm) cell. the pcm cell includes a heater, wherein a bottom surface of the heater is at or below a top surface of the fet.