International business machines corporation (20240096978). COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract
Contents
- 1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT
Organization Name
international business machines corporation
Inventor(s)
Tsung-Sheng Kang of Ballston Lake NY (US)
Tao Li of Slingerlands NY (US)
Ruilong Xie of Niskayuna NY (US)
Chih-Chao Yang of Glenmont NY (US)
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096978 titled 'COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT
Simplified Explanation
The abstract describes a CMOS apparatus with an n-doped field effect transistor (NFET) and a p-doped field effect transistor (PFET), each with a source and drain structure. A common backside drain contact connects the NFET and PFET drain structures to a backside interconnect layer.
- NFET and PFET in CMOS apparatus
- Common backside drain contact for NFET and PFET
Potential Applications
The technology described in this patent application could be applied in:
- Integrated circuits
- Semiconductor devices
- Electronics manufacturing
Problems Solved
This technology helps in:
- Improving connectivity in CMOS devices
- Enhancing performance of NFET and PFET
Benefits
The benefits of this technology include:
- Increased efficiency in circuit design
- Enhanced reliability of semiconductor devices
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art could be the use of separate drain contacts for NFET and PFET in CMOS devices.
Unanswered Questions
How does this technology impact power consumption in electronic devices?
This article does not delve into the specific effects of this technology on power consumption in electronic devices.
What are the manufacturing costs associated with implementing this technology?
The article does not provide information on the manufacturing costs of incorporating this technology into semiconductor devices.
Original Abstract Submitted
a cmos apparatus includes an n-doped field effect transistor (nfet); and a p-doped field effect transistor (pfet), each of which has a source structure and a drain structure. a common backside drain contact, which is disposed at the backside surface of the nfet and the pfet, electrically connects the nfet drain structure and the pfet drain structure to a backside interconnect layer.