International business machines corporation (20240096794). VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract
Contents
- 1 VTFET CIRCUIT WITH OPTIMIZED OUTPUT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VTFET CIRCUIT WITH OPTIMIZED OUTPUT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
VTFET CIRCUIT WITH OPTIMIZED OUTPUT
Organization Name
international business machines corporation
Inventor(s)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
Brent A. Anderson of Jericho VT (US)
Lawrence A. Clevenger of Saratoga Springs NY (US)
Ruilong Xie of Niskayuna NY (US)
Albert M. Chu of Nashua NH (US)
Reinaldo Vega of Mahopac NY (US)
VTFET CIRCUIT WITH OPTIMIZED OUTPUT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096794 titled 'VTFET CIRCUIT WITH OPTIMIZED OUTPUT
Simplified Explanation
The semiconductor device described in the abstract includes a first via level forming a bottom jumper, a first set of two or more first metallization tracks, a second via level forming a first top jumper, and a second metallization track.
- The first via level serves as a bottom jumper to provide an output.
- The first set of two or more first metallization tracks overlies the first via level.
- The second via level forms a first top jumper overlying the first set of two or more first metallization tracks.
- A second metallization track overlies the second via level.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the development of advanced semiconductor devices with improved performance and functionality.
Problems Solved
This technology solves the problem of efficiently routing signals in semiconductor devices by utilizing multiple via levels and metallization tracks to optimize signal flow and reduce interference.
Benefits
The benefits of this technology include enhanced signal integrity, increased circuit density, and improved overall performance of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the fields of telecommunications, consumer electronics, automotive electronics, and industrial automation.
Possible Prior Art
One possible prior art for this technology could be the use of multiple via levels and metallization tracks in semiconductor devices to improve signal routing and reduce signal interference.
Unanswered Questions
How does this technology compare to existing signal routing techniques in semiconductor devices?
This article does not provide a direct comparison to existing signal routing techniques in semiconductor devices. Further research and analysis would be needed to determine the specific advantages and limitations of this technology compared to existing methods.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
This article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes. Factors such as cost, scalability, and compatibility with existing manufacturing equipment could pose challenges that need to be explored further.
Original Abstract Submitted
a semiconductor device includes: a first via level forming a bottom jumper configured to provide an output; a first set of two or more first metallization tracks overlying the first via level; a second via level forming a first top jumper overlying the first set of two or more first metallization tracks; and a second metallization track overlying the second via level.
- International business machines corporation
- Nicholas Anthony Lanzillo of Wynantskill NY (US)
- Brent A. Anderson of Jericho VT (US)
- Lawrence A. Clevenger of Saratoga Springs NY (US)
- Ruilong Xie of Niskayuna NY (US)
- Albert M. Chu of Nashua NH (US)
- Reinaldo Vega of Mahopac NY (US)
- H01L23/528
- H01L21/768
- H01L23/522
- H01L29/66
- H01L29/78