Intel corporation (20240105854). TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES simplified abstract
Contents
- 1 TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES
Organization Name
Inventor(s)
Gilbert Dewey of Hillsboro OR (US)
Abhishek Sharma of Hillsboro OR (US)
Jack Kavalieros of Portland OR (US)
Shriram Shivaraman of Hillsboro OR (US)
Seung Hoon Sung of Portland OR (US)
Tahir Ghani of Portland OR (US)
Arnab Sen Gupta of Beaverton OR (US)
Nazila Haratipour of Hillsboro OR (US)
Justin Weber of Portland OR (US)
TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105854 titled 'TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES
Simplified Explanation
The abstract of the patent application describes a transistor structure that includes a metal oxide contact buffer between a channel material and a source or drain contact metallization. This contact buffer helps control the transistor channel length by limiting reactions between the contact metallization and the channel material, where the channel material is of a first composition and the contact buffer is of a second composition.
- The patent application describes a transistor structure with a metal oxide contact buffer.
- The contact buffer helps control the transistor channel length by limiting reactions between contact metallization and the channel material.
- The channel material and contact buffer have different compositions.
Potential Applications
The technology described in the patent application could be applied in:
- Semiconductor devices
- Integrated circuits
- Transistor manufacturing
Problems Solved
The technology addresses the following issues:
- Controlling transistor channel length
- Limiting reactions between contact metallization and channel material
Benefits
The benefits of this technology include:
- Improved transistor performance
- Enhanced control over device characteristics
- Increased reliability and longevity of semiconductor devices
Potential Commercial Applications
The technology could have commercial applications in:
- Electronics industry
- Semiconductor manufacturing sector
- Consumer electronics market
Possible Prior Art
One possible prior art related to this technology is the use of different contact materials in semiconductor devices to improve device performance.
Unanswered Questions
How does the contact buffer composition affect transistor performance?
The composition of the contact buffer may influence the reaction between the contact metallization and the channel material, thereby impacting transistor performance.
What are the specific materials used in the contact buffer and channel material?
The patent application mentions a metal oxide contact buffer and a channel material of a first composition, but the specific materials are not disclosed.
Original Abstract Submitted
transistor structures may include a metal oxide contact buffer between a portion of a channel material and source or drain contact metallization. the contact buffer may improve control of transistor channel length by limiting reaction between contact metallization and the channel material. the channel material may be of a first composition and the contact buffer may be of a second composition.
- Intel corporation
- Gilbert Dewey of Hillsboro OR (US)
- Abhishek Sharma of Hillsboro OR (US)
- Van Le of Beaverton OR (US)
- Jack Kavalieros of Portland OR (US)
- Shriram Shivaraman of Hillsboro OR (US)
- Seung Hoon Sung of Portland OR (US)
- Tahir Ghani of Portland OR (US)
- Arnab Sen Gupta of Beaverton OR (US)
- Nazila Haratipour of Hillsboro OR (US)
- Justin Weber of Portland OR (US)
- H01L29/786
- H01L21/8238
- H01L27/092
- H01L29/221