18517325. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18517325 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a substrate with a cell region and a peripheral circuit region, gate structures, bit line structures, contact plug structures, conductive structures, and insulation patterns.
- The first gate structure extends in a direction parallel to the substrate's upper surface in the cell region.
- Bit line structures run perpendicular to the first direction and parallel to the substrate's upper surface in the cell region.
- A second gate structure is located in the peripheral circuit region of the substrate.
- Contact plug structures connect the bit line structures to the substrate.
- First conductive structures in the peripheral circuit region are electrically connected to the substrate.
- Upper insulation structures separate the conductive structures and include hydrogen diffusing insulation patterns.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can improve the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - Enhances the integration and functionality of semiconductor devices. - Improves the reliability and performance of electronic components.
Benefits: - Increased efficiency and performance of semiconductor devices. - Enhanced reliability and durability of electronic circuits.
Commercial Applications: - The technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and automotive electronics.
Questions about the technology: 1. How does the hydrogen diffusing insulation pattern contribute to the functionality of the semiconductor device? 2. What are the specific advantages of the contact plug structures in improving the connectivity of the device components?
Frequently Updated Research: - Stay updated on advancements in semiconductor manufacturing processes and materials to enhance the performance of the device.
Original Abstract Submitted
A semiconductor device may include a substrate including a cell region and a peripheral circuit region, a first gate structure in the cell region of the substrate, the first gate structure extending in a first direction parallel to an upper surface of the substrate, bit line structures on the cell region of the substrate, the bit line structures extending in a second direction perpendicular to the first direction and parallel to the upper surface of the substrate, a second gate structure on the peripheral circuit region of the substrate, contact plug structures between the bit line structures, the contact plug structures contacting the substrate, first conductive structures on peripheral circuit region of the substrate, the first conductive structures being electrically connected to the peripheral circuit region of the substrate, a first upper insulation structure between the first conductive structures, the first upper insulation structure including a first upper insulation pattern and a hydrogen diffusing insulation pattern surrounding a bottom and sidewalls of the first upper insulation pattern, and a second upper insulation pattern between upper portions of the contact plug structures.
