18460284. MEMORY SYSTEM simplified abstract (Kioxia Corporation)

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MEMORY SYSTEM

Organization Name

Kioxia Corporation

Inventor(s)

Kensaku Yamaguchi of Kawasaki Kanagawa (JP)

Kiyotaka Iwasaki of Yokohama Kanagawa (JP)

Takashi Takemoto of Yokohama Kanagawa (JP)

Kohei Oikawa of Kawasaki Kanagawa (JP)

MEMORY SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 18460284 titled 'MEMORY SYSTEM

Simplified Explanation

The memory system described in the patent application involves a controller that performs a write operation and a partial overwrite operation on a non-volatile memory. The write operation includes compressing and encrypting data before writing it to a specific location in the memory, while the partial overwrite operation involves encrypting new data without compression, combining it with existing data, and writing the composite data to a different location in the memory.

  • The controller compresses and encrypts data before writing it to the non-volatile memory.
  • The controller performs a partial overwrite operation by encrypting new data without compression, combining it with existing data, and writing the composite data to a different location in the memory.

Potential Applications

The technology described in this patent application could be applied in various industries such as data storage, cybersecurity, and information technology.

Problems Solved

This technology solves the problem of efficiently storing and updating data in a non-volatile memory system while ensuring data security through encryption.

Benefits

The benefits of this technology include improved data compression and encryption processes, enhanced data storage efficiency, and increased data security measures.

Potential Commercial Applications

One potential commercial application of this technology could be in the development of secure data storage solutions for businesses and organizations, especially those dealing with sensitive or confidential information.

Possible Prior Art

One possible prior art for this technology could be existing memory systems that involve data compression and encryption processes, but may not specifically address partial overwrite operations like the one described in the patent application.

Unanswered Questions

How does this technology compare to existing memory systems in terms of data storage efficiency and security measures?

This article does not provide a direct comparison between this technology and existing memory systems in terms of data storage efficiency and security measures. Further research or testing may be needed to determine the advantages and limitations of this technology in comparison to others.

What are the potential limitations or challenges of implementing this technology in practical applications?

The article does not discuss any potential limitations or challenges of implementing this technology in practical applications. It would be important to consider factors such as compatibility with existing systems, cost of implementation, and potential vulnerabilities that could arise during operation.


Original Abstract Submitted

A memory system includes a non-volatile memory and a controller. The controller is configured to perform a write operation of a first data cluster and a first partial overwrite operation of the first data cluster with first overwrite data. The write operation includes compressing and then encrypting the first data cluster, and writing the compressed and encrypted first data cluster into a first physical location of the non-volatile memory. The first partial overwrite operation includes encrypting the first overwrite data without performing compression, reading the compressed and encrypted first data cluster from the first physical location of the non-volatile memory, generating a first composite data cluster with the compressed and encrypted first data cluster read from the first physical location and the encrypted first overwrite data that is not compressed, and writing the first composite data cluster into a second physical location of the non-volatile memory.