18345839. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Sung Wook Jung of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18345839 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes a unique channel structure with a slit interposed between a first select line and a second select line. The channel structure features a sidewall facing the slit, enhancing the device's functionality.
- The semiconductor memory device has a first select line and a second select line with a slit in between.
- The channel structure in the device is adjacent to the slit and includes a sidewall facing the slit.
- This design feature improves the performance and efficiency of the semiconductor memory device.
- The unique channel structure enhances the overall functionality of the device.
- The presence of the slit and the sidewall in the channel structure sets this semiconductor memory device apart from conventional designs.
Potential Applications: This technology can be applied in various semiconductor memory devices, improving their performance and efficiency.
Problems Solved: The channel structure with a slit and sidewall addresses issues related to data storage and retrieval in semiconductor memory devices.
Benefits: Enhanced performance, improved efficiency, and better functionality are some of the key benefits of this semiconductor memory device.
Commercial Applications: This technology can be utilized in the development of faster and more reliable semiconductor memory devices, catering to the growing demand for high-performance memory solutions in various industries.
Questions about the technology: 1. How does the presence of a slit and sidewall in the channel structure impact the performance of the semiconductor memory device? 2. What specific advantages does the unique channel structure offer compared to traditional designs?
Original Abstract Submitted
Provided herein is a semiconductor memory device. The semiconductor memory device includes a first select line and a second select line disposed with a slit interposed therebetween, and a channel structure that is disposed in each of the first select line and the second select line and is adjacent to the slit. In the semiconductor memory device, the channel structure includes a sidewall facing the slit.
