18090822. INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS simplified abstract (Intel Corporation)

INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS

Organization Name

Intel Corporation

Inventor(s)

Abhishek Anil Sharma of Portland OR (US)

Sagar Suthram of Portland OR (US)

Wilfred Gomes of Portland OR (US)

Tahir Ghani of Portland OR (US)

Anand S. Murthy of Portland OR (US)

Pushkar Ranade of San Jose CA (US)

INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18090822 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS

Simplified Explanation: The patent application describes structures with vertical shared gate high-drive thin film transistors in an integrated circuit.

• A stack of alternating dielectric layers and metal layers is present.
• A trench is formed through the stack.
• A semiconductor channel layer lines the sides of the trench.
• A gate dielectric layer is positioned along the sides of the semiconductor channel layer in the trench.
• A gate electrode is located within the sides of the gate dielectric layer.

Key Features and Innovation:

• Integration of vertical shared gate high-drive thin film transistors in an integrated circuit.
• Use of alternating dielectric layers and metal layers in the structure.
• Formation of a trench to accommodate the semiconductor channel layer and gate dielectric layer.
• High-drive capability of the thin film transistors.
• Efficient use of space within the integrated circuit.

Potential Applications: The technology can be applied in the manufacturing of advanced integrated circuits for various electronic devices such as smartphones, tablets, and computers.

Problems Solved:

• Enhanced performance and efficiency of thin film transistors.
• Improved integration of components in an integrated circuit.
• Increased drive capability for faster processing speeds.

Benefits:

• Higher performance and efficiency in electronic devices.
• Compact design for space-saving in integrated circuits.
• Faster processing speeds for improved user experience.

Commercial Applications: The technology can be utilized in the production of high-performance electronic devices, leading to enhanced market competitiveness and consumer satisfaction.

Questions about Thin Film Transistors: 1. How do vertical shared gate high-drive thin film transistors differ from traditional transistors? 2. What are the advantages of using thin film transistors in integrated circuits?

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Original Abstract Submitted

Structures having vertical shared gate high-drive thin film transistors are described. In an example, an integrated circuit structure includes a stack of alternating dielectric layers and metal layers. A trench is through the stack of alternating dielectric layers and metal layers. A semiconductor channel layer is along sides of the trench. A gate dielectric layer is along sides the semiconductor channel layer in the trench. A gate electrode is within sides of the gate dielectric layer.