20240038583. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
In Ku Kang of Icheon-si Gyeonggi-do (KR)
Sung Hyun Yoon of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240038583 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that consists of a stack structure with conductive patterns separated by air gaps. The stack structure also includes a channel structure and a slit insulating layer that penetrates it. The slit insulating layer has two parts: a first interposition part that covers the sidewall of one of the conductive patterns, and a second interposition part that covers one of the air gaps from the side. The second interposition part is narrower than the first interposition part.
- The semiconductor device includes a stack structure with conductive patterns and air gaps.
- A channel structure penetrates the stack structure.
- A slit insulating layer also penetrates the stack structure.
- Air gaps are defined between the conductive patterns.
- The slit insulating layer has a first interposition part covering a sidewall of one of the conductive patterns.
- The slit insulating layer also has a second interposition part covering one of the air gaps from the side.
- The second interposition part is narrower than the first interposition part.
Potential applications of this technology:
- Semiconductor devices with improved performance and efficiency.
- Integration of multiple functions in a compact space.
- Enhanced reliability and durability of semiconductor devices.
Problems solved by this technology:
- Reduction of parasitic capacitance and resistance in semiconductor devices.
- Prevention of short circuits between conductive patterns.
- Improved insulation and isolation between components.
Benefits of this technology:
- Higher performance and efficiency of semiconductor devices.
- Increased integration capabilities.
- Enhanced reliability and durability of semiconductor devices.
Original Abstract Submitted
a semiconductor device includes a stack structure including conductive patterns spaced apart from each other, a channel structure penetrating the stack structure, and a slit insulating layer penetrating the stack structure. air gaps are defined between the conductive patterns. the slit insulating layer includes a first interposition part covering a sidewall of one of the conductive patterns and a second interposition part covering one of the air gaps from the side. a smallest width of the second interposition part is smaller than a smallest width of the first interposition part.