Pages that link to "Category:JaeHyun Park of Hwaseong-si (KR)"
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The following pages link to Category:JaeHyun Park of Hwaseong-si (KR):
View (previous 50 | next 50) (20 | 50 | 100 | 250 | 500)- 17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.) (← links)
- 17679465. NANOSHEET TRANSISTOR DEVICES AND RELATED FABRICATION METHODS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.) (← links)
- 17984042. 3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.) (← links)
- 17984025. 3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.) (← links)