Pages that link to "Category:Anand Murthy of Portland OR (US)"
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The following pages link to Category:Anand Murthy of Portland OR (US):
View (previous 50 | next 50) (20 | 50 | 100 | 250 | 500)- US Patent Application 18228139. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH TIGHT VERTICAL SPACING simplified abstract (← links)
- 17847559. GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION simplified abstract (Intel Corporation) (← links)
- 17523711. CLADDING AND CONDENSATION FOR STRAINED SEMICONDUCTOR NANORIBBONS simplified abstract (Intel Corporation) (← links)
- Patent Applications Report for 23rd Jun 2023 (← links)
- Patent Applications Report for 5th Jan 2024 (← links)
- Intel corporation (20240105248). TCAM WITH HYSTERETIC OXIDE MEMORY CELLS simplified abstract (← links)
- Intel corporation (20240105582). LOW TEMPERATURE CAPACITIVELY COUPLED DEVICE FOR LOW NOISE CIRCUITS simplified abstract (← links)
- Intel corporation (20240105584). BURIED VIA THROUGH FRONT-SIDE AND BACK-SIDE METALLIZATION LAYERS WITH OPTIONAL CYLINDRICAL MIM CAPACITOR simplified abstract (← links)
- Intel corporation (20240105585). SOLID STATE ELECTROLYTES FOR BACKEND SUPERCAPACITORS simplified abstract (← links)
- Intel corporation (20240105635). SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS simplified abstract (← links)
- Intel corporation (20240105677). RECONSTITUTED WAFER WITH SIDE-STACKED INTEGRATED CIRCUIT DIE simplified abstract (← links)
- Intel corporation (20240105700). SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES simplified abstract (← links)
- Intel corporation (20240105811). FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION simplified abstract (← links)
- Intel corporation (20240105860). LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS simplified abstract (← links)
- Intel corporation (20240136277). TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract (← links)
- 18395192. TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract (Intel Corporation) (← links)
- Intel corporation (20240186378). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB SOURCE OR DRAIN STRUCTURES simplified abstract (← links)
- Intel corporation (20240258427). SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES simplified abstract (← links)