Pages that link to "Category:Nicholas Anthony Lanzillo of Wynantskill NY (US)"
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The following pages link to Category:Nicholas Anthony Lanzillo of Wynantskill NY (US):
View (previous 50 | next 50) (20 | 50 | 100 | 250 | 500)- 17969260. Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) (← links)
- 18049297. SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) (← links)
- International business machines corporation (20240162118). BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION simplified abstract (← links)
- International business machines corporation (20240162139). METHOD AND STRUCTURE OF FORMING BARRIER-LESS SKIP VIA WITH SUBTRACTIVE METAL PATTERNING simplified abstract (← links)
- International business machines corporation (20240162152). AIRGAP SPACER FOR POWER VIA simplified abstract (← links)
- 17986276. BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) (← links)
- 18054187. METHOD AND STRUCTURE OF FORMING BARRIER-LESS SKIP VIA WITH SUBTRACTIVE METAL PATTERNING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) (← links)
- 18054991. AIRGAP SPACER FOR POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) (← links)
- International business machines corporation (20240178050). ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE simplified abstract (← links)
- International business machines corporation (20240178127). ISOLATED SUPER VIA TO MIDDLE METAL LINE LEVEL simplified abstract (← links)
- International business machines corporation (20240178143). BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE simplified abstract (← links)
- 18059098. ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) (← links)
- 18060168. ISOLATED SUPER VIA TO MIDDLE METAL LINE LEVEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) (← links)
- 18060544. BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) (← links)
- International business machines corporation (20240186177). ASYMMETRIC SKIP-LEVEL VIA STRUCTURE simplified abstract (← links)
- International business machines corporation (20240186245). REDUCED CAPACITANCE BETWEEN POWER VIA BAR AND GATES simplified abstract (← links)
- International business machines corporation (20240194236). NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL simplified abstract (← links)
- International business machines corporation (20240194585). SUPER VIA WITH SIDEWALL SPACER simplified abstract (← links)
- International business machines corporation (20240194586). SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS simplified abstract (← links)
- International business machines corporation (20240194601). POWER TAP CELL FOR FRONT SIDE POWER RAIL CONNECTION TO BSPDN simplified abstract (← links)
- International business machines corporation (20240194681). CIRCUIT LAYOUTS WITH VARIABLE CIRCUIT CELL HEIGHTS IN THE SAME CIRCUIT ROW simplified abstract (← links)
- 18065195. NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL simplified abstract (International Business Machines Corporation) (← links)
- 18065120. SUPER VIA WITH SIDEWALL SPACER simplified abstract (International Business Machines Corporation) (← links)
- 18078454. SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS simplified abstract (International Business Machines Corporation) (← links)
- 18062624. POWER TAP CELL FOR FRONT SIDE POWER RAIL CONNECTION TO BSPDN simplified abstract (International Business Machines Corporation) (← links)
- 18079079. CIRCUIT LAYOUTS WITH VARIABLE CIRCUIT CELL HEIGHTS IN THE SAME CIRCUIT ROW simplified abstract (International Business Machines Corporation) (← links)
- International business machines corporation (20240203867). SKIP VIA WITH DISCONTINUOUS DIELECTRIC CAP simplified abstract (← links)
- International business machines corporation (20240203870). FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract (← links)
- International business machines corporation (20240203880). SEMICONDUCTOR DEVICE WITH POWER SUPPLY DISTRIBUTION NETWORKS ON FRONTSIDE AND BACKSIDE OF A CIRCUIT simplified abstract (← links)
- International business machines corporation (20240203982). DECOUPLING CAPACITOR INSIDE BACKSIDE POWER DISTRIBUTION NETWORK POWERVIA TRENCH simplified abstract (← links)
- International business machines corporation (20240203985). STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) simplified abstract (← links)
- International business machines corporation (20240203993). LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract (← links)
- International business machines corporation (20240203996). HYBRID CELL HEIGHT DESIGN WITH A BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (← links)
- International business machines corporation (20240204063). SEMICONDUCTOR DEVICE WITH BACKSIDE U-SHAPED SILICIDE simplified abstract (← links)
- International business machines corporation (20240204067). CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE simplified abstract (← links)
- International business machines corporation (20240204100). VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract (← links)
- Patent Applications Report for 21st Jun 2024 (← links)
- 18065747. SKIP VIA WITH DISCONTINUOUS DIELECTRIC CAP simplified abstract (International Business Machines Corporation) (← links)
- 18083818. FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract (International Business Machines Corporation) (← links)
- 18068123. SEMICONDUCTOR DEVICE WITH POWER SUPPLY DISTRIBUTION NETWORKS ON FRONTSIDE AND BACKSIDE OF A CIRCUIT simplified abstract (International Business Machines Corporation) (← links)
- 18069213. DECOUPLING CAPACITOR INSIDE BACKSIDE POWER DISTRIBUTION NETWORK POWERVIA TRENCH simplified abstract (International Business Machines Corporation) (← links)
- 18081795. STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) simplified abstract (International Business Machines Corporation) (← links)
- 18065663. LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract (International Business Machines Corporation) (← links)
- 18067148. HYBRID CELL HEIGHT DESIGN WITH A BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (International Business Machines Corporation) (← links)
- 18067748. SEMICONDUCTOR DEVICE WITH BACKSIDE U-SHAPED SILICIDE simplified abstract (International Business Machines Corporation) (← links)
- 18066243. CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE simplified abstract (International Business Machines Corporation) (← links)
- 18069077. VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract (International Business Machines Corporation) (← links)
- International business machines corporation (20240213244). VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract (← links)
- International business machines corporation (20240213252). VTFET CIRCUIT WITH OPTIMIZED MOL simplified abstract (← links)
- International business machines corporation (20240215266). RESISTIVE RANDOM ACCESS MEMORY ON A BURIED BITLINE simplified abstract (← links)