View source for Intel corporation (20240136278). STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE simplified abstract

=STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE=


==Organization Name==

[[:Category:intel corporation|intel corporation]]


[[Category:intel corporation]]

==Inventor(s)==

[[:Category:Jiun Hann Sir of Gelugor (MY)|Jiun Hann Sir of Gelugor (MY)]][[Category:Jiun Hann Sir of Gelugor (MY)]]

[[:Category:Poh Boon Khoo of Perai (MY)|Poh Boon Khoo of Perai (MY)]][[Category:Poh Boon Khoo of Perai (MY)]]

[[:Category:Eng Huat Goh of Ayer Itam (MY)|Eng Huat Goh of Ayer Itam (MY)]][[Category:Eng Huat Goh of Ayer Itam (MY)]]

[[:Category:Amruthavalli Pallavi Alur of Tempe AZ (US)|Amruthavalli Pallavi Alur of Tempe AZ (US)]][[Category:Amruthavalli Pallavi Alur of Tempe AZ (US)]]

[[:Category:Debendra Mallik of Chandler AZ (US)|Debendra Mallik of Chandler AZ (US)]][[Category:Debendra Mallik of Chandler AZ (US)]]

==STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240136278 titled 'STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE

==Simplified Explanation==

The abstract describes a patent application for an embedded multi-die interconnect bridge (EMIB) that is fabricated on a substrate using photolithographic techniques. The EMIB is then separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. The low z-height of the EMIB allows for useful trace and via real estate below it to be employed in the package substrate.

* Fabrication of embedded multi-die interconnect bridge (EMIB) on a substrate using photolithographic techniques
* Separation of EMIB from the substrate and placement on the penultimate layer of an integrated-circuit package substrate
* Low z-height of the EMIB allows for utilization of trace and via real estate below it in the package substrate

== Potential Applications ==
The technology could be used in:
* High-performance computing
* Data centers
* Networking equipment

== Problems Solved ==
* Efficient use of real estate in integrated-circuit package substrates
* Improved interconnectivity between multiple dies
* Enhanced performance and reliability of electronic devices

== Benefits ==
* Increased functionality in a compact space
* Enhanced signal integrity
* Cost-effective manufacturing process

== Potential Commercial Applications ==
Optimizing space in:
* Mobile devices
* Internet of Things (IoT) devices
* Automotive electronics

== Possible Prior Art ==
One possible prior art could be the use of multi-die interconnect technologies in semiconductor packaging.

== Unanswered Questions ==
=== What are the specific photolithographic techniques used in fabricating the EMIB? ===
The article does not provide detailed information on the specific photolithographic techniques employed in the fabrication process.

=== How does the separation of the EMIB from the substrate impact the overall performance of the integrated-circuit package? ===
The article does not delve into the specific performance implications of separating the EMIB from the substrate.


==Original Abstract Submitted==

an embedded multi-die interconnect bridge (emib) is fabricated on a substrate using photolithographic techniques, and the emib is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. a low z-height of the emib, allows for useful trace and via real estate below the emib, to be employed in the package substrate.



[[Category:H01L23/522]]
[[Category:H01L23/00]]