View source for 18511102. ENLARGING CONTACT AREA AND PROCESS WINDOW FOR A CONTACT VIA simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=ENLARGING CONTACT AREA AND PROCESS WINDOW FOR A CONTACT VIA=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Li-Zhen Yu of New Taipei City (TW)|Li-Zhen Yu of New Taipei City (TW)]][[Category:Li-Zhen Yu of New Taipei City (TW)]]

[[:Category:Cheng-Chi Chuang of New Taipei City (TW)|Cheng-Chi Chuang of New Taipei City (TW)]][[Category:Cheng-Chi Chuang of New Taipei City (TW)]]

[[:Category:Chih-Hao Wang of Baoshan Township (TW)|Chih-Hao Wang of Baoshan Township (TW)]][[Category:Chih-Hao Wang of Baoshan Township (TW)]]

[[:Category:Yu-Ming Lin of Hsinchu City (TW)|Yu-Ming Lin of Hsinchu City (TW)]][[Category:Yu-Ming Lin of Hsinchu City (TW)]]

[[:Category:Lin-Yu Huang of Hsinchu (TW)|Lin-Yu Huang of Hsinchu (TW)]][[Category:Lin-Yu Huang of Hsinchu (TW)]]

==ENLARGING CONTACT AREA AND PROCESS WINDOW FOR A CONTACT VIA - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18511102 titled 'ENLARGING CONTACT AREA AND PROCESS WINDOW FOR A CONTACT VIA

==Simplified Explanation==

The integrated chip structure described in the patent application includes a substrate, gate electrode, spacer structure, conductive via, and liner.
* The substrate serves as the foundation for the chip structure.
* The gate electrode is positioned over the substrate to control the flow of electrical current.
* The spacer structure surrounds the gate electrode to provide support and insulation.
* The conductive via is placed on the gate electrode to facilitate electrical connections.
* The liner is arranged along the sidewalls of the spacer structure to enhance the structural integrity of the chip.

== Potential Applications ==
This technology could be utilized in the manufacturing of advanced semiconductor devices, such as microprocessors and memory chips.

== Problems Solved ==
This innovation addresses the need for improved integration and performance in chip structures, enhancing overall functionality and reliability.

== Benefits ==
The integrated chip structure offers enhanced electrical connectivity, structural stability, and efficiency, leading to improved performance and durability in semiconductor devices.


==Original Abstract Submitted==

In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a substrate. A gate electrode is over the substrate and a spacer structure laterally surrounds the gate electrode. A conductive via is disposed on the gate electrode. A liner is arranged along one or more sidewalls of the spacer structure. The conductive via has a bottommost surface that has a larger width than a part of the conductive via that is laterally adjacent to one or more interior sidewalls of the liner.



[[Category:H01L21/768]]
[[Category:H01L21/033]]
[[Category:H01L21/311]]
[[Category:H01L21/8234]]
[[Category:H01L23/522]]
[[Category:H01L23/528]]
[[Category:H01L23/532]]