View source for 18350874. SEMICONDUCTOR SWITCHES FOR HIGH VOLTAGE OPERATIONS simplified abstract (Texas Instruments Incorporated)

=SEMICONDUCTOR SWITCHES FOR HIGH VOLTAGE OPERATIONS=


==Organization Name==

[[:Category:Texas Instruments Incorporated|Texas Instruments Incorporated]]


[[Category:Texas Instruments Incorporated]]

==Inventor(s)==

[[:Category:Rohan Sinha of BENGALURU (IN)|Rohan Sinha of BENGALURU (IN)]][[Category:Rohan Sinha of BENGALURU (IN)]]

[[:Category:Rajat Kulshrestha of BANGALORE (IN)|Rajat Kulshrestha of BANGALORE (IN)]][[Category:Rajat Kulshrestha of BANGALORE (IN)]]

==SEMICONDUCTOR SWITCHES FOR HIGH VOLTAGE OPERATIONS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18350874 titled 'SEMICONDUCTOR SWITCHES FOR HIGH VOLTAGE OPERATIONS

==Simplified Explanation==

The abstract describes a semiconductor switch designed for high voltage operations. It consists of two DE-NMOS FETs, with the first one connected to the input and output nodes and the second one connected to the node. The second FET is controlled by a signal that enables or disables the switch. A voltage source is connected to the node, providing a higher voltage than the input node. A current source supplies current to the voltage source.

* The semiconductor switch is designed for high voltage operations.
* It includes two DE-NMOS FETs, with the first one connected to the input and output nodes.
* The second FET is connected to the node and controlled by a signal.
* A voltage source is connected to the node, providing a higher voltage than the input node.
* A current source supplies current to the voltage source.

== Potential Applications ==
* Power electronics
* High voltage systems
* Electric vehicles
* Renewable energy systems

== Problems Solved ==
* Allows for high voltage operations in a safe operating area
* Enables efficient switching in high voltage applications

== Benefits ==
* Improved safety in high voltage operations
* Enhanced efficiency in high voltage switching
* Suitable for various applications in power electronics and renewable energy systems


==Original Abstract Submitted==

Semiconductor switches for high voltage operations are described. The semiconductor switch includes a first DE-NMOS FET including a gate coupled to a node of the switch with its source and drain coupled to input and output nodes, respectively. The switch also includes a second DE-NMOS FET with a drain coupled to the node. A gate of the second DE-NMOS FET is configured to receive a signal enabling or disabling the switch. The switch includes a voltage source (e.g., a voltage-controlled voltage source) coupled to the node, which supplies a first voltage at the node. The first voltage is greater than a second voltage at the input node by a predetermined amount such that the first DE-NMOS FET may operate within a safe operating area while supporting high voltage operations. The switch also includes a current source configured to supply current to the voltage source.



[[Category:H03K17/10]]
[[Category:H03K19/0185]]