View source for 18090822. INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS simplified abstract (Intel Corporation)

=INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Abhishek Anil Sharma of Portland OR (US)|Abhishek Anil Sharma of Portland OR (US)]][[Category:Abhishek Anil Sharma of Portland OR (US)]]

[[:Category:Sagar Suthram of Portland OR (US)|Sagar Suthram of Portland OR (US)]][[Category:Sagar Suthram of Portland OR (US)]]

[[:Category:Wilfred Gomes of Portland OR (US)|Wilfred Gomes of Portland OR (US)]][[Category:Wilfred Gomes of Portland OR (US)]]

[[:Category:Tahir Ghani of Portland OR (US)|Tahir Ghani of Portland OR (US)]][[Category:Tahir Ghani of Portland OR (US)]]

[[:Category:Anand S. Murthy of Portland OR (US)|Anand S. Murthy of Portland OR (US)]][[Category:Anand S. Murthy of Portland OR (US)]]

[[:Category:Pushkar Ranade of San Jose CA (US)|Pushkar Ranade of San Jose CA (US)]][[Category:Pushkar Ranade of San Jose CA (US)]]

==INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18090822 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS

'''Simplified Explanation:'''
The patent application describes structures with vertical shared gate high-drive thin film transistors in an integrated circuit.

* A stack of alternating dielectric layers and metal layers is present.
* A trench is formed through the stack.
* A semiconductor channel layer lines the sides of the trench.
* A gate dielectric layer is positioned along the sides of the semiconductor channel layer in the trench.
* A gate electrode is located within the sides of the gate dielectric layer.

'''Key Features and Innovation:'''
* Integration of vertical shared gate high-drive thin film transistors in an integrated circuit.
* Use of alternating dielectric layers and metal layers in the structure.
* Formation of a trench to accommodate the semiconductor channel layer and gate dielectric layer.
* High-drive capability of the thin film transistors.
* Efficient use of space within the integrated circuit.

'''Potential Applications:'''
The technology can be applied in the manufacturing of advanced integrated circuits for various electronic devices such as smartphones, tablets, and computers.

'''Problems Solved:'''
* Enhanced performance and efficiency of thin film transistors.
* Improved integration of components in an integrated circuit.
* Increased drive capability for faster processing speeds.

'''Benefits:'''
* Higher performance and efficiency in electronic devices.
* Compact design for space-saving in integrated circuits.
* Faster processing speeds for improved user experience.

'''Commercial Applications:'''
The technology can be utilized in the production of high-performance electronic devices, leading to enhanced market competitiveness and consumer satisfaction.

'''Questions about Thin Film Transistors:'''
1. How do vertical shared gate high-drive thin film transistors differ from traditional transistors?
2. What are the advantages of using thin film transistors in integrated circuits?

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==Original Abstract Submitted==

Structures having vertical shared gate high-drive thin film transistors are described. In an example, an integrated circuit structure includes a stack of alternating dielectric layers and metal layers. A trench is through the stack of alternating dielectric layers and metal layers. A semiconductor channel layer is along sides of the trench. A gate dielectric layer is along sides the semiconductor channel layer in the trench. A gate electrode is within sides of the gate dielectric layer.



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