View source for 17837048. METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE simplified abstract (NANYA TECHNOLOGY CORPORATION)

=METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:NANYA TECHNOLOGY CORPORATION|NANYA TECHNOLOGY CORPORATION]]


[[Category:NANYA TECHNOLOGY CORPORATION]]

==Inventor(s)==

[[:Category:CHENG-YAN Ji of NEW TAIPEI CITY (TW)|CHENG-YAN Ji of NEW TAIPEI CITY (TW)]][[Category:CHENG-YAN Ji of NEW TAIPEI CITY (TW)]]

[[:Category:CHU-HSIANG Hsu of NEW TAIPEI CITY (TW)|CHU-HSIANG Hsu of NEW TAIPEI CITY (TW)]][[Category:CHU-HSIANG Hsu of NEW TAIPEI CITY (TW)]]

[[:Category:JING Hsu of KAOHSIUNG CITY (TW)|JING Hsu of KAOHSIUNG CITY (TW)]][[Category:JING Hsu of KAOHSIUNG CITY (TW)]]

==METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17837048 titled 'METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE

==Simplified Explanation==

The present application describes a method for creating a conductive feature on a substrate. The method involves the following steps:

1. Deposit an insulative layer on the substrate.
2. Form a trench in the insulative layer.
3. Perform a cyclic process consisting of a deposition step and a removal step.
4. Repeat the cyclic process a specific number of times.
5. Fill the trench with the conductive material after the cyclic process.

* The method involves depositing a conductive material in a trench to create a conductive feature.
* The cyclic process ensures the proper deposition and removal of the conductive material.
* The number of times the cyclic process is repeated is predetermined.
* The method allows for precise control over the fabrication of the conductive feature.

==Potential Applications==
* This method can be used in the fabrication of electronic devices, such as integrated circuits and microchips.
* It can also be applied in the production of sensors, actuators, and other electronic components.
* The method may find use in the development of advanced materials and nanotechnology.

==Problems Solved==
* The method provides a reliable and controlled way to create a conductive feature on a substrate.
* It eliminates the need for complex and time-consuming fabrication processes.
* The method ensures the uniformity and accuracy of the conductive feature.

==Benefits==
* The method allows for the efficient and cost-effective production of conductive features.
* It enables the creation of high-quality and precise conductive structures.
* The method can be easily integrated into existing fabrication processes.


==Original Abstract Submitted==

The present application provides a method of fabricating a conductive feature. The method of fabricating the conductive feature includes steps of depositing an insulative layer on a substrate, forming a trench in the insulative layer, performing a cyclic process comprising a sequence of a deposition step and a removal step to deposit a conductive material in the trench until the deposition step has been performed is equal to a first preset number of times and a number of the times the removal step has been performed is equal to a second preset number of times, and filling the trench with the conductive material after the cyclic process.



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