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Sk hynix inc. (20250126782). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

sk hynix inc.

Inventor(s)

Do Young Jang of Gyeonggi-do KR

Jae Il Kang of Gyeonggi-do KR

Myung Hee Na of Gyeonggi-do KR

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

This abstract first appeared for US patent application 20250126782 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Original Abstract Submitted

a semiconductor device and a method for fabricating the same are provided. the semiconductor device includes a first semiconductor structure including a cell region and a peripheral circuit region, and including a cell capacitor disposed in the cell region and a first insulating layer disposed in the cell region and the peripheral circuit region to cover the cell capacitor; a second semiconductor structure including a cell transistor disposed over the first insulating layer in the cell region and a peripheral circuit transistor disposed over the first insulating layer in the peripheral circuit region; and a first conductor passing through the first insulating layer to electrically connect a first cell source/drain region of the cell transistor and an electrode of the cell capacitor.

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