Samsung electronics co., ltd. (20240258393). GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
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GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
This abstract first appeared for US patent application 20240258393 titled 'GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
Original Abstract Submitted
a gate structure includes a first conductive pattern including a first metal or a first metal compound and being doped with a second metal or silicon; a second conductive pattern on the first conductive pattern, the second conductive pattern including a third metal; and a gate insulation pattern covering a lower surface and a sidewall of the first conductive pattern and a sidewall of the second conductive pattern; wherein a work function of the second metal is smaller than a work function of the first metal and is smaller than a work function of the first metal compound.