HIGH FREQUENCY SEMICONDUCTOR INTEGRATED CIRCUIT

Organization Name

Inventor(s)

Takayuki Teraguchi of Kawasaki Kanagawa (JP)

HIGH FREQUENCY SEMICONDUCTOR INTEGRATED CIRCUIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240322808 titled 'HIGH FREQUENCY SEMICONDUCTOR INTEGRATED CIRCUIT

The abstract describes a high-frequency semiconductor integrated circuit with multiple switch circuits that allow for the switching of input and output terminals.

The circuit includes first and second input terminals, as well as first and second output terminals.
It features first to fourth switch circuits that enable the switching of the coupling destination of the input terminals.
When the coupling destination of the first input terminal is switched, specific switching operations are performed on the switch circuits to ensure proper functionality.

Potential Applications: - This technology could be used in high-frequency communication systems. - It may find applications in radar systems and wireless communication devices.

Problems Solved: - Enables efficient switching of input and output terminals in high-frequency circuits. - Provides a reliable method for changing the coupling destination of input terminals.

Benefits: - Improved performance and reliability in high-frequency semiconductor circuits. - Enhanced flexibility in routing signals within integrated circuits.

Commercial Applications: - This technology could be valuable in the telecommunications industry for improving signal processing efficiency. - It may also have applications in aerospace and defense for radar systems.

Questions about the technology: 1. How does this high-frequency semiconductor integrated circuit compare to traditional switching methods? 2. What are the potential challenges in implementing this technology in practical applications?

Frequently Updated Research: - Stay updated on advancements in high-frequency semiconductor technology for potential improvements in circuit design and performance.

Original Abstract Submitted

according to one embodiment, a high frequency semiconductor integrated circuit includes a first input terminal, a second input terminal, a first output terminal, a second output terminal, first to fourth switch circuits. in a case where a coupling destination of the first input terminal is switched from the first output terminal to the second output terminal, a third switching operation changing the third switch circuit from an on state to an off state and a fourth switching operation changing the fourth switch circuit from the off state to the on state are finished, after a first switching operation changing the first switch circuit from the on state to the off state and a second switching operation changing the second switch circuit from the off state to the on state are finished.