METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTANCE EFFECT ELEMENT

Abstract: this method for manufacturing a magnetoresistance effect element has a measurement step, a comparison step, and a determination step. in the measurement step, a laminate including a first detection layer and a second detection layer is etched, and a first measurement time from detection of a first signal derived from a first material included in the first detection layer to detection of a second signal derived from a second material included in the second detection layer is measured. in the comparison step, a first reference time from detection of the first signal to detection of the second signal during etching of a reference laminate having the same film constitution as the laminate is compared with the first measurement time, and a deviation between the first reference time and the first measurement time is obtained. in the determination step, conditions from detection of the second signal to ending of etching are determined based on the deviation.

Inventor(s): Eiji KOMURA

CPC Classification: H10N50/80 (Constructional details)

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