20250221317. Mram Device Having Two-terminal Select (Taiwan Semiconductor Manufacturing , .)

MRAM DEVICE HAVING TWO-TERMINAL SELECTORS

Abstract: a memory device includes a spin-orbit torque (“sot”) conductor, a magnetic tunneling junction (“mtj”) structure above the sot conductor, a two-terminal read selector above the mtj structure, a two-terminal write selector above the mtj structure, and a bit line below the sot conductor. the two-terminal read selector is conductively connected to the pinned layer in the mtj structure. the two-terminal write selector is conductively connected to a first terminal of the sot conductor. the bit line is conductively connected to a second terminal of the sot conductor.

Inventor(s): Elia AMBROSI, MingYuan SONG, Cheng-Hsien WU, Xinyu BAO

CPC Classification: H10N50/10 (Magnetoresistive devices)

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