SEMICONDUCTOR DEVICE

Abstract: a semiconductor device includes a hydrogen rich layer interposed between a common source layer and an uppermost one of gate electrodes in a cell region, wherein a concentration of hydrogen (h) contained in the hydrogen rich layer is greater than a concentration of hydrogen (h) contained in the gate electrodes. accordingly, hydrogen (h) may be effectively supplied to a channel hole during a high temperature process for forming a cell region. thus, an issue of supply deficiency of hydrogen (h), which may occur according to an increase in the number of layers of a semiconductor device, may be improved, and operation reliability of the semiconductor device may be improved.

Inventor(s): Chulmin CHOI, Sanghoon KIM, Seungjae BAIK, Jaeduk LEE

CPC Classification: H10D62/235 (No explanation available)

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