SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

Abstract: semiconductor devices and methods of manufacture are presented herein. a method includes bonding a first semiconductor die to a first side of a first semiconductor device, the first semiconductor device including a first region of active circuitry and a second region of active circuitry that is electrically isolated from the first region of active circuitry, bonding a second semiconductor die to the first side of the first semiconductor device adjacent to the first semiconductor die, bonding a local interconnect die to the first side of the first semiconductor device between the first semiconductor die and the second semiconductor die, wherein the local interconnect die electrically connects the first region of active circuitry to the second region of active circuitry, and forming a redistribution structure over a second of the first semiconductor device opposite the first side of the first semiconductor device.

Inventor(s): Sheng-An Kuo, Chen-Sheng Lin, Min-Chien Hsiao, Chao-Wen Shih, Kuo-Chiang Ting, Yen-Ming Chen

CPC Classification: H10B80/00 (Assemblies of multiple devices comprising at least one memory device covered by this subclass)

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