20250220917. Semiconductor De (SAMSUNG ELECTRONICS ., .)
SEMICONDUCTOR DEVICE
Abstract: a semiconductor device includes first conductive lines provided on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, second conductive lines spaced apart from the first conductive lines in a second direction parallel to the top surface of the substrate, a gate electrode disposed between the first and second conductive lines and extended in the first direction, a plurality of channel patterns provided to enclose a side surface of the gate electrode and spaced apart from each other in the first direction, a ferroelectric pattern between each of the channel patterns and the gate electrode, and a gate insulating pattern between each of the channel patterns and the ferroelectric pattern. each of the channel patterns is connected to a corresponding one of the first conductive lines and a corresponding one of the second conductive lines.
Inventor(s): Kyunghwan LEE, Yongseok KIM, Hyuncheol KIM, Jongman PARK, Dongsoo WOO
CPC Classification: H10B51/20 (ELECTRONIC MEMORY DEVICES)
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