18312795. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18312795 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
- An integrated circuit (IC) device with a conductive area on a substrate - A first electrode connected to the conductive area, with a width increasing towards the substrate - A second electrode with a silicon germanium (SiGe) film surrounding the first electrode - A dielectric film between the first and second electrodes - The SiGe film component varies with distance from the substrate
Potential Applications
- Advanced semiconductor devices - High-performance electronic circuits - Communication systems - Signal processing applications
Problems Solved
- Improved performance and efficiency of integrated circuits - Enhanced signal transmission and processing capabilities - Reduction of signal interference and noise
Benefits
- Increased speed and reliability of electronic devices - Enhanced functionality and performance of IC devices - Potential for smaller and more efficient electronic systems
Original Abstract Submitted
An integrated circuit (IC) device may include a conductive area on a substrate; a first electrode connected to the conductive area on the substrate, a width of the first electrode in a lateral direction gradually increasing toward the substrate; a second electrode on the substrate, the second electrode including a silicon germanium (SiGe) film, the SiGe film surrounding the first electrode; and a dielectric film between the first electrode and the second electrode. A content of a component of the SiGe film may vary according to a distance from the substrate.