US Patent Application 18366725. RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME simplified abstract

RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company Limited

Inventor(s)

Gerben Doornbos of Kessel-Lo (BE)

Blandine Duriez of Bruxelles (BE)

Marcus Johannes Henricus Van Dal of Linden (BE)

RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18366725 titled 'RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME

Simplified Explanation

The patent application describes a transistor and methods of making it.

• The transistor has a patterned gate electrode, a dielectric layer, and a patterned first oxide semiconductor layer.
• The first oxide semiconductor layer includes a channel region and source/drain regions.
• The source/drain regions are thicker than the channel region.
• Contacts are located on the first oxide semiconductor layer and connected to the source/drain regions.

Original Abstract Submitted

A transistor, integrated semiconductor device and methods of making are disclosed. The transistor includes a patterned gate electrode, a dielectric layer located over the patterned gate electrode and a patterned first oxide semiconductor layer comprising a channel region and source/drain regions located on sides of the channel region. The thickness of the source/drain regions is greater than a thickness of the channel region. The transistor also includes contacts located on the patterned first oxide semiconductor layer and connected to the source/drain regions of the patterned first oxide semiconductor layer.