US Patent Application 18365832. Source/Drain Regions and Methods of Forming Same simplified abstract
Contents
Source/Drain Regions and Methods of Forming Same
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Source/Drain Regions and Methods of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18365832 titled 'Source/Drain Regions and Methods of Forming Same
Simplified Explanation
The patent application describes a method for fabricating a semiconductor device using a dummy gate stack and epitaxy regions. Here are the key points:
- The method involves etching recesses next to dummy gate stacks and fins.
- A first epitaxy region is grown in the first recess.
- A metal-comprising mask is deposited over the dummy gate stacks, the first epitaxy region, and the second recess.
- The mask is patterned to expose the first dummy gate stack and the first epitaxy region.
- A second epitaxy region is grown in the first recess over the first epitaxy region.
- The remaining portions of the mask are removed after growing the second epitaxy region.
Overall, this method allows for the precise fabrication of semiconductor devices by selectively growing epitaxy regions and using a metal-comprising mask.
Original Abstract Submitted
A method includes etching a first recess adjacent a first dummy gate stack and a first fin; etching a second recess adjacent a second dummy gate stack and a second fin; and epitaxially growing a first epitaxy region in the first recess. The method further includes depositing a first metal-comprising mask over the first dummy gate stack, over the second dummy gate stack, over the first epitaxy region in the first recess, and in the second recess; patterning the first metal-comprising mask to expose the first dummy gate stack and the first epitaxy region; epitaxially growing a second epitaxy region in the first recess over the first epitaxy region; and after epitaxially growing the second epitaxy region, removing remaining portions of the first metal-comprising mask.
