US Patent Application 18361758. GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE simplified abstract
GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chien-Shun Liao of Hsinchu (TW)
GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361758 titled 'GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE
Simplified Explanation
The patent application describes gated MIS tunnel diode devices with controllable negative transconductance behavior.
- The device includes a substrate, a tunnel diode dielectric layer, and a gate dielectric layer.
- A tunnel diode electrode and a gate electrode are positioned on the respective dielectric layers.
- A substrate electrode is also present on the substrate surface.
- The tunnel diode electrode is located between the gate electrode and the substrate electrode.
- The device allows for control over the negative transconductance behavior.
Original Abstract Submitted
Gated MIS tunnel diode devices having a controllable negative transconductance behavior are provided. In some embodiments, a device includes a substrate, a tunnel diode dielectric layer on a surface of the substrate, and a gate dielectric layer on the surface of the substrate and adjacent to the tunnel diode dielectric layer. A tunnel diode electrode is disposed on the tunnel diode dielectric layer, and a gate electrode is disposed on the gate dielectric layer. A substrate electrode is disposed on the surface of the substrate, and the tunnel diode electrode is positioned between the gate electrode and the substrate electrode.
