US Patent Application 18361262. PROCESS AND STRUCTURE FOR SOURCE/DRAIN CONTACTS simplified abstract

PROCESS AND STRUCTURE FOR SOURCE/DRAIN CONTACTS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Meng-Huan Jao of Hsinchu (TW)]]

[[Category:Lin-Yu Huang of Hsinchu (TW)]]

[[Category:Sheng-Tsung Wang of Hsinchu (TW)]]

[[Category:Huan-Chieh Su of Changhua County (TW)]]

[[Category:Cheng-Chi Chuang of New Taipei City (TW)]]

[[Category:Chih-Hao Wang of Hsinchu County (TW)]]

PROCESS AND STRUCTURE FOR SOURCE/DRAIN CONTACTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361262 titled 'PROCESS AND STRUCTURE FOR SOURCE/DRAIN CONTACTS

Simplified Explanation

The patent application describes a method for creating a structure with source/drain electrodes and multiple layers of dielectric material.

• The method starts by placing a first dielectric layer over the source/drain electrodes.
• A first etch mask is then applied to cover a specific area of the first dielectric layer.
• The first dielectric layer is etched, resulting in trenches over the source/drain electrodes.
• These trenches are filled with a second dielectric layer that has a different material than the first dielectric layer.
• The first etch mask is removed.
• A second etching process is performed, which includes isotropic etching to create a second trench above one of the source/drain electrodes.
• A metal layer is deposited into at least the second trench.
• Finally, a chemical mechanical planarization (CMP) process is carried out to smooth the metal layer.

Original Abstract Submitted

A method includes providing a structure having source/drain electrodes and a first dielectric layer over the source/drain electrodes; forming a first etch mask covering a first area of the first dielectric layer; performing a first etching process to the first dielectric layer, resulting in first trenches over the source/drain electrodes; filling the first trenches with a second dielectric layer that has a different material than the first dielectric layer; removing the first etch mask; performing a second etching process including isotropic etching to the first area of the first dielectric layer, resulting in a second trench above a first one of the source/drain electrodes; depositing a metal layer into at least the second trench; and performing a chemical mechanical planarization (CMP) process to the metal layer.