US Patent Application 18342145. SEMICONDUCTOR INTERCONNECT, ELECTRODE FOR SEMICONDUCTOR DEVICE, AND METHOD OF PREPARING MULTIELEMENT COMPOUND THIN FILM simplified abstract
SEMICONDUCTOR INTERCONNECT, ELECTRODE FOR SEMICONDUCTOR DEVICE, AND METHOD OF PREPARING MULTIELEMENT COMPOUND THIN FILM
Organization Name
Inventor(s)
Youngjae Kang of Suwon-si (KR)
Joungeun Yoo of Seongnam-si (KR)
Duseop Yoon of Seongnam-si (KR)
SEMICONDUCTOR INTERCONNECT, ELECTRODE FOR SEMICONDUCTOR DEVICE, AND METHOD OF PREPARING MULTIELEMENT COMPOUND THIN FILM - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18342145 Titled 'SEMICONDUCTOR INTERCONNECT, ELECTRODE FOR SEMICONDUCTOR DEVICE, AND METHOD OF PREPARING MULTIELEMENT COMPOUND THIN FILM'
Simplified Explanation
The abstract describes a semiconductor interconnect and electrode for semiconductor devices. These components are made of a thin film material that is a multielement compound represented by Formula 1. The film has a thickness of 50 nm or less and a grain size to thickness ratio of 1.2 or greater. It also has a resistivity of 200 µΩ·cm or less.
Original Abstract Submitted
A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 µΩ·cm:
