US Patent Application 18336428. MEMORY DEVICE simplified abstract
Contents
MEMORY DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
He-Zhou Wan of Shanghai City (CN)
Xiu-Li Yang of Shanghai City (CN)
Pei-Le Li of Nanjing City (CN)
Ching-Wei Wu of Nantou County (TW)
MEMORY DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18336428 Titled 'MEMORY DEVICE'
Simplified Explanation
The abstract describes a memory device that consists of a memory array, a latch, and a logic element. The memory array operates based on a global write signal. The latch generates latch write data using a clock signal. The logic element generates the global write signal by combining the clock signal and the latch write data.
Original Abstract Submitted
A memory device includes a memory array, a first latch and a first logic element. The memory array is configured to operate according to a first global write signal. The first latch is configured to generate a first latch write data based on a clock signal. The first logic element is configured to generate the first global write signal based on the clock signal and the first latch write data.
