US Patent Application 18336093. METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-ACCESS MEMORY (FeRAM) simplified abstract
METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-ACCESS MEMORY (FeRAM)
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tzu-Yu Chen of Kaohsiung City (TW)
Sheng-Hung Shih of Hsinchu City (TW)
Fu-Chen Chang of New Taipei City (TW)
METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-ACCESS MEMORY (FeRAM) - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18336093 Titled 'METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-ACCESS MEMORY (FeRAM)'
Simplified Explanation
The abstract describes a type of memory device called a ferroelectric random access memory (FeRAM). This FeRAM device has a bottom electrode structure and a top electrode, with a ferroelectric structure in between. The top electrode is narrower than the ferroelectric structure, creating a ledge. A dielectric sidewall spacer structure is placed on this ledge and covers the outer sides of the top electrode.
Original Abstract Submitted
Some embodiments relate to a ferroelectric random access memory (FeRAM) device. The FeRAM device includes a bottom electrode structure and a top electrode overlying the ferroelectric structure. The top electrode has a first width as measured between outermost sidewalls of the top electrode. A ferroelectric structure separates the bottom electrode structure from the top electrode. The ferroelectric structure has a second width as measured between outermost sidewalls of the ferroelectric structure. The second width is greater than the first width such that the ferroelectric structure includes a ledge that reflects a difference between the first width and the second width. A dielectric sidewall spacer structure is disposed on the ledge and covers the outermost sidewalls of the top electrode.
