US Patent Application 18336088. INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES simplified abstract

INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Mauricio Manfrini of Zhubei City (TW)

Chung-Te Lin of Tainan City (TW)

Gerben Doornbos of Kessel-Lo (BE)

Marcus Johannes Henricus Van Dal of Linden (BE)

INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 18336088 Titled 'INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES'

Simplified Explanation

The abstract describes an integrated chip that includes a memory device. The memory device has a structure consisting of a bottom electrode, an upper electrode, and a metal/dielectric layer in between. The metal/dielectric layer is made up of a lower dielectric layer, an upper dielectric layer, and a metal layer separating them. This structure is placed on top of a semiconductor substrate.

Original Abstract Submitted

Some embodiments relate to an integrated chip including a memory device. The memory device includes a bottom electrode disposed over a semiconductor substrate. An upper electrode is disposed over the bottom electrode. An intercalated metal/dielectric structure is sandwiched between the bottom electrode and the upper electrode. The intercalated metal/dielectric structure comprises a lower dielectric layer over the bottom electrode, an upper dielectric layer over the lower dielectric layer, and a first metal layer separating the upper dielectric layer from the lower dielectric layer.