US Patent Application 18318488. PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION DEVICE, IMAGING SYSTEM, MOVING UNIT, AND EQUIPMENT simplified abstract

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PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION DEVICE, IMAGING SYSTEM, MOVING UNIT, AND EQUIPMENT

Organization Name

CANON KABUSHIKI KAISHA==Inventor(s)==

[[Category:HIDEAKI Ishino of Tokyo (JP)]]

PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION DEVICE, IMAGING SYSTEM, MOVING UNIT, AND EQUIPMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18318488 titled 'PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION DEVICE, IMAGING SYSTEM, MOVING UNIT, AND EQUIPMENT

Simplified Explanation

The patent application describes a photoelectric conversion device that includes a semiconductor substrate, an insulating layer, and various light-shielded regions.

  • The device has a light-receiving pixel region and a peripheral region with an opening to expose a bonding pad.
  • A first light-shielded region includes a light-shielding film on the insulating layer.
  • A second light-shielded region has a first trench in the semiconductor substrate and a second trench in the insulating layer.
  • The second trench is covered with the light-shielding film.
  • In a planar view, the first and second trenches overlap each other.


Original Abstract Submitted

A photoelectric conversion device includes a semiconductor substrate, an insulating layer, a light-receiving pixel region, first and second light-shielded regions, and a peripheral region. The insulating layer allows light to pass through the insulating layer. The first light-shielded region includes a light-shielding film formed on the insulating layer. The peripheral region has an opening that penetrates the insulating layer and the semiconductor substrate and exposes a bonding pad of the semiconductor substrate. A first trench is formed in the semiconductor substrate in the second light-shielded region. A second trench is formed in the insulating layer in the second light-shielded region and penetrates the insulating layer. A side face and a bottom face of the second trench are covered with the light-shielding film formed on the insulating layer. In a planar view to the semiconductor substrate, the first trench and the second trench have portions overlapping each other.

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