US Patent Application 18217063. NONVOLATILE MEMORY DEVICE SUPPORTING HIGH-EFFICIENCY I/O INTERFACE simplified abstract
Contents
NONVOLATILE MEMORY DEVICE SUPPORTING HIGH-EFFICIENCY I/O INTERFACE
Organization Name
Inventor(s)
SEONKYOO Lee of Hwaseong-si (KR)
JEONGDON Ihm of Seongnam-si (KR)
BYUNGHOON Jeong of Hwaseong-si (KR)
NONVOLATILE MEMORY DEVICE SUPPORTING HIGH-EFFICIENCY I/O INTERFACE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18217063 Titled 'NONVOLATILE MEMORY DEVICE SUPPORTING HIGH-EFFICIENCY I/O INTERFACE'
Simplified Explanation
The abstract describes a nonvolatile memory device that has multiple pins for receiving signals. It includes a memory cell array and a memory interface circuit. The memory interface circuit can operate in two modes. In the first mode, it obtains a command, an address, and data from the third signals. In the second mode, it obtains the command and the address from the first and second signals, and the data from the third signals.
Original Abstract Submitted
A nonvolatile memory device includes a first pin that receives a first signal, a second pin that receives a second signal, third pins that receive third signals, a fourth pin that receives a write enable signal, a memory cell array, and a memory interface circuit that obtains a command, an address, and data from the third signals in a first mode and obtains the command and the address from the first signal and the second signal and the data from the third signals in a second mode. In the first mode, the memory interface circuit obtains the command from the third signals and obtains the address from the third signals. In the second mode, the memory interface circuit obtains the command from the first signal and the second signal and obtains the address from the first signal and the second signal.
