US Patent Application 18211055. METHOD FOR FORMING EPITAXIAL SOURCE/DRAIN FEATURES AND SEMICONDUCTOR DEVICES FABRICATED THEREOF simplified abstract
Contents
METHOD FOR FORMING EPITAXIAL SOURCE/DRAIN FEATURES AND SEMICONDUCTOR DEVICES FABRICATED THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jung-Hung Chang of Changhua (TW)
Shih-Cheng Chen of New Taipei City (TW)
Chien Ning Yao of Hsinchu (TW)
Kuo-Cheng Chiang of Hsinchu (TW)
METHOD FOR FORMING EPITAXIAL SOURCE/DRAIN FEATURES AND SEMICONDUCTOR DEVICES FABRICATED THEREOF - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18211055 Titled 'METHOD FOR FORMING EPITAXIAL SOURCE/DRAIN FEATURES AND SEMICONDUCTOR DEVICES FABRICATED THEREOF'
Simplified Explanation
The abstract describes a method for creating N-type and P-type source/drain features in a semiconductor device using two masks. This method allows for more flexibility in the shape and size of the source/drain features and increases the tolerance for errors. Additionally, the abstract mentions the formation of trenches between neighboring source/drain features to prevent bridging, which is achieved by etching from the backside of the substrate.
Original Abstract Submitted
The present disclosure provides a method of forming N-type and P-type source/drain features using one patterned mask and one self-aligned mask to increase windows of error tolerance and provide flexibilities for source/drain features of various shapes and/or volumes. The present disclosure also includes forming a trench between neighboring source/drain features to remove bridging between the neighboring source/drain features. In some embodiments, the trenches between the source/drain features are formed by etching from the backside of the substrate.
