US Patent Application 17827837. MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE simplified abstract

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MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

HAI-DANG Trinh of HSINCHU CITY (TW)

YI YANG Wei of HSINCHU (TW)

FA-SHEN Jiang of TAOYUAN CITY (TW)

BI-SHEN Lee of HSINCHU (TW)

HSUN-CHUNG Kuang of HSINCHU CITY (TW)

MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17827837 titled 'MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE

Simplified Explanation

The patent application describes a multilayer structure, capacitor structure, and electronic device.

  • The multilayer structure consists of three dielectric layers: a first dielectric layer, a second dielectric layer, and an intermediate dielectric layer.
  • The intermediate dielectric layer is located between the first and second dielectric layers.
  • The material of the intermediate dielectric layer is represented by the formula ABO, where A can be hafnium, zirconium, lanthanum, or tantalum, and B can be lanthanum, aluminum, or tantalum.
  • A and B are different elements, and O represents oxygen.
  • The value of x in the formula is a number between 0 and 1.
  • The patent application aims to provide a multilayer structure with improved dielectric properties for use in electronic devices.


Original Abstract Submitted

A multilayer structure, a capacitor structure and an electronic device are provided. The multilayer structure includes a first dielectric layer, a second dielectric layer and an intermediate dielectric layer. The intermediate dielectric layer is disposed between the first dielectric layer and the second dielectric layer. A material of the intermediate dielectric layer is represented by a formula of ABO, wherein A includes hafnium (Hf), zirconium (Zr), lanthanum (La) or tantalum (Ta), B includes lanthanum (La), aluminum (Al) or tantalum (Ta), A is different from B, O is oxygen, and x is a number less than 1 and greater than 0.

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