US Patent Application 17824487. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING PROTRUSION OF WORD LINE simplified abstract
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING PROTRUSION OF WORD LINE
Organization Name
Inventor(s)
CHIN-TE Kuo of NEW TAIPEI CITY (TW)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING PROTRUSION OF WORD LINE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17824487 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING PROTRUSION OF WORD LINE
Simplified Explanation
- The patent application describes a method of manufacturing a semiconductor device. - The method involves providing a substrate and forming a conductive layer on it. - The conductive layer is then patterned to create a first metallization layer and a second metallization layer that extend in a specific direction. - The first metallization layer has a protruding portion that extends towards the second metallization layer. - Within the first metallization layer, a first channel layer is formed, and within the second metallization layer, a second channel layer is formed.
Original Abstract Submitted
The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing a substrate; forming a conductive layer on the substrate; patterning the conductive layer to form a first metallization layer and a second metallization layer extending along a first direction, wherein the first metallization layer has a first protruding portion protruding toward the second metallization layer; and forming a first channel layer within the first metallization layer and a second channel layer within the second metallization layer.
