US Patent Application 17824249. SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Ta-Chun Lin of Hsinchu (TW)]]

[[Category:Hou-Ju Li of Hsinchu City (TW)]]

[[Category:Chun-Jun Lin of Hsinchu City (TW)]]

[[Category:Yi-Fang Pai of Hsinchu City (TW)]]

[[Category:Kuo-Hua Pan of Hsinchu City (TW)]]

[[Category:Jhon-Jhy Liaw of Zhudong Township (TW)]]

SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17824249 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The patent application describes a method for forming a semiconductor device structure.

• The method involves providing a substrate with a base and two fins.
• A gate stack is formed over the fins.
• Spacers are formed on the gate sidewalls and adjacent to one of the fins.
• The fins are partially removed.
• Source/drain structures are formed in the resulting trenches.
• The ratio of the height of a merged portion to the height of the source/drain structure is at least 0.5.

Original Abstract Submitted

A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a gate stack over the first fin and the second fin. The method includes forming a first spacer over gate sidewalls of the gate stack and a second spacer adjacent to the second fin. The method includes partially removing the first fin and the second fin. The method includes forming a first source/drain structure and a second source/drain structure in the first trench and the second trench respectively. A first ratio of a first height of the first merged portion to a second height of a first top surface of the first source/drain structure is greater than or equal to about 0.5.