US Patent Application 17752737. FIRST METAL STRUCTURE, LAYOUT, AND METHOD simplified abstract

FIRST METAL STRUCTURE, LAYOUT, AND METHOD

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chi-Yu Lu of Hsinchu (TW)]]

[[Category:Chih-Liang Chen of Hsinchu (TW)]]

[[Category:Chia-Tien Wu of Hsinchu (TW)]]

[[Category:Chih-Yu Lai of Hsinchu (TW)]]

[[Category:Shang-Hsuan Chiu of Hsinchu (TW)]]

FIRST METAL STRUCTURE, LAYOUT, AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 17752737 titled 'FIRST METAL STRUCTURE, LAYOUT, AND METHOD

Simplified Explanation

The patent application describes an integrated circuit structure with specific components and connections.

• The structure includes two active areas, two gate structures, and metal segments in different layers.
• The gate structures are positioned over the active areas.
• A first metal segment extends in one direction and is positioned between the gate structures.
• Second and third metal segments extend in another direction and are in a different metal layer.
• A gate via structure connects the third metal segment to one of the gate structures.
• The second metal segment overlies and is electrically connected to the first metal segment.
• The first and second metal segments are connected to the second active area and isolated from the first active area between the gate structures.
• The metal segments are also connected to the first active area outside the gate structures.

Original Abstract Submitted

An integrated circuit (IC) structure includes two active areas extending in a first direction, two gate structures extending in a second direction, a first metal segment extending in the second direction in a first metal layer, second and third metal segments extending in the first direction in a second metal layer, and a gate via structure extending from the third metal segment to one of the gate structures. The gate structures overlie the active areas, the first metal segment overlies each of the active areas between the gate structures, the second metal segment overlies a first active area and overlies and is electrically connected to the first metal segment, and the first and second metal segments are electrically connected to the second active area, isolated from the first active area between the gate structures, and connected to the first active area outside the gate structures.