US Patent Application 17705653. MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE simplified abstract

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MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Harry-Hak-Lay Chuang of Zhubei City (TW)


Fu-Chen Chang of New Taipei City (TW)


Tzu-Yu Chen of Kaohsiung City (TW)


Sheng-Hung Shih of Hsinchu City (TW)


Kuo-Chi Tu of Hsin-Chu (TW)


MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 17705653 Titled 'MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE'

Simplified Explanation

The abstract describes a ferroelectric memory device that consists of three main components: a bottom electrode, a ferroelectric structure, and a top electrode. The bottom electrode is made of molybdenum, a type of metal.


Original Abstract Submitted

The present disclosure relates to a ferroelectric memory device that includes a bottom electrode, a ferroelectric structure overlying the bottom electrode, and a top electrode overlying the ferroelectric structure where the bottom electrode includes molybdenum.

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