Difference between revisions of "Tokyo Electron Limited patent applications published on November 30th, 2023"
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| + | '''Summary of the patent applications from Tokyo Electron Limited on November 30th, 2023''' | ||
| + | |||
| + | Tokyo Electron Limited has recently filed several patents related to substrate processing and plasma processing apparatus. These patents aim to improve the efficiency, accuracy, and selectivity of various substrate processing techniques. | ||
| + | |||
| + | Summary: | ||
| + | |||
| + | - Patent 1: The first patent describes an apparatus for estimating the warpage amount of a substrate. It includes an acquirer to capture an image of the substrate's surface, a calculator to calculate the rate of change in pixel value along the radial direction of the substrate, and an estimator to estimate the warpage amount based on a pre-determined correlation. | ||
| + | |||
| + | - Patent 2: The second patent presents a method for processing a substrate with a SiO film and a Low-k film or SiN film. It involves exposing the Low-k film or SiN film to oxygen plasma, applying a self-assembled monolayer (SAM) material to form a protective film, and etching the SiO film with hydrofluoric acid while protecting the Low-k film or SiN film. | ||
| + | |||
| + | - Patent 3: The third patent describes a plasma processing apparatus with a roughened adsorption member to enhance the adsorption of by-products released during the plasma process. It includes a processing container, a mounting stage, and an exhaust passage surrounding the stage. | ||
| + | |||
| + | - Patent 4: The fourth patent introduces a plasma processing apparatus that focuses and sorts ions in the plasma to improve efficiency and accuracy. It includes a processing vessel, a plasma forming device, a focusing device, and a sorting device. | ||
| + | |||
| + | - Patent 5: The fifth patent presents a method for substrate processing using a substrate processing apparatus. It involves selecting a polarity modification pattern for electromagnets, generating plasma from a processing gas, and etching the substrate based on the selected pattern. | ||
| + | |||
| + | - Patent 6: The sixth patent describes a substrate processing apparatus with an inner and outer edge ring for aligning and supporting the substrate. It includes a plasma processing chamber, a support, an outer edge ring electrostatic chuck, and a lifter. | ||
| + | |||
| + | - Patent 7: The seventh patent presents a method for processing a substrate using a substrate processing apparatus. It involves plasma processing with a process gas containing fluorocarbon and a rare gas, and repeating the plasma processing in a cycle. | ||
| + | |||
| + | - Patent 8: The eighth patent describes a plasma processing apparatus that uses electromagnetic waves to generate plasma. It includes a waveguide structure with a resonator and a load impedance portion. | ||
| + | |||
| + | - Patent 9: The ninth patent presents a method for performing a plasma process using a signal generator and a plasma chamber. It involves adjusting variable components of a matching circuit based on feedback from an RF signal to sustain the plasma. | ||
| + | |||
| + | - Patent 10: The tenth patent describes a method for processing a substrate in a substrate processing device. It involves performing plasma processing with different plasma generation conditions, including radio-frequency power and processing time. | ||
| + | |||
| + | Notable Applications: | ||
| + | |||
| + | * Estimating warpage amount of a substrate based on image analysis. | ||
| + | * Selective etching of SiO film while protecting Low-k film or SiN film. | ||
| + | * Enhanced adsorption of by-products during plasma processing. | ||
| + | * Improved efficiency and accuracy of plasma processing through ion focusing and sorting. | ||
| + | * Improved efficiency and effectiveness of substrate processing through polarity modification. | ||
| + | * Alignment and support of substrate using inner and outer edge rings. | ||
| + | * Repeated plasma processing with different plasma generation conditions. | ||
| + | * Efficient plasma generation using VHF or UHF waves. | ||
| + | * Sustaining plasma using feedback-based adjustment of matching circuit. | ||
| + | * Plasma processing with different plasma generation conditions for etching target films. | ||
| + | |||
| + | |||
| + | |||
| + | |||
==Patent applications for Tokyo Electron Limited on November 30th, 2023== | ==Patent applications for Tokyo Electron Limited on November 30th, 2023== | ||
| − | ===SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD ([[US Patent Application 18322855. SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD simplified abstract|18322855]])=== | + | ===SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD ([[US Patent Application 18322855. SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD simplified abstract (Tokyo Electron Limited)|18322855]])=== |
| Line 9: | Line 51: | ||
| − | ===SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18324469. SUBSTRATE PROCESSING APPARATUS simplified abstract|18324469]])=== | + | ===SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18324469. SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18324469]])=== |
| Line 17: | Line 59: | ||
| − | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18032786. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract|18032786]])=== | + | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18032786. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18032786]])=== |
| Line 25: | Line 67: | ||
| − | ===Systems and Methods for Plasma Process ([[US Patent Application 17804496. Systems and Methods for Plasma Process simplified abstract|17804496]])=== | + | ===Systems and Methods for Plasma Process ([[US Patent Application 17804496. Systems and Methods for Plasma Process simplified abstract (Tokyo Electron Limited)|17804496]])=== |
| Line 33: | Line 75: | ||
| − | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18249552. PLASMA PROCESSING APPARATUS simplified abstract|18249552]])=== | + | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18249552. PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18249552]])=== |
| Line 41: | Line 83: | ||
| − | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18231278. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract|18231278]])=== | + | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18231278. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18231278]])=== |
| Line 49: | Line 91: | ||
| − | ===SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ALIGNING RING MEMBER ([[US Patent Application 18199401. SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ALIGNING RING MEMBER simplified abstract|18199401]])=== | + | ===SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ALIGNING RING MEMBER ([[US Patent Application 18199401. SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ALIGNING RING MEMBER simplified abstract (Tokyo Electron Limited)|18199401]])=== |
| Line 57: | Line 99: | ||
| − | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18200910. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract|18200910]])=== | + | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18200910. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18200910]])=== |
| Line 65: | Line 107: | ||
| − | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18251077. PLASMA PROCESSING APPARATUS simplified abstract|18251077]])=== | + | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18251077. PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18251077]])=== |
| Line 73: | Line 115: | ||
| − | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18232834. PLASMA PROCESSING APPARATUS simplified abstract|18232834]])=== | + | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18232834. PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18232834]])=== |
| Line 81: | Line 123: | ||
| − | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18248900. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract|18248900]])=== | + | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18248900. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18248900]])=== |
| Line 89: | Line 131: | ||
| − | ===WARPAGE AMOUNT ESTIMATION APPARATUS AND WARPAGE AMOUNT ESTIMATION METHOD ([[US Patent Application 18249630. WARPAGE AMOUNT ESTIMATION APPARATUS AND WARPAGE AMOUNT ESTIMATION METHOD simplified abstract|18249630]])=== | + | ===WARPAGE AMOUNT ESTIMATION APPARATUS AND WARPAGE AMOUNT ESTIMATION METHOD ([[US Patent Application 18249630. WARPAGE AMOUNT ESTIMATION APPARATUS AND WARPAGE AMOUNT ESTIMATION METHOD simplified abstract (Tokyo Electron Limited)|18249630]])=== |
Latest revision as of 14:52, 6 December 2023
Summary of the patent applications from Tokyo Electron Limited on November 30th, 2023
Tokyo Electron Limited has recently filed several patents related to substrate processing and plasma processing apparatus. These patents aim to improve the efficiency, accuracy, and selectivity of various substrate processing techniques.
Summary:
- Patent 1: The first patent describes an apparatus for estimating the warpage amount of a substrate. It includes an acquirer to capture an image of the substrate's surface, a calculator to calculate the rate of change in pixel value along the radial direction of the substrate, and an estimator to estimate the warpage amount based on a pre-determined correlation.
- Patent 2: The second patent presents a method for processing a substrate with a SiO film and a Low-k film or SiN film. It involves exposing the Low-k film or SiN film to oxygen plasma, applying a self-assembled monolayer (SAM) material to form a protective film, and etching the SiO film with hydrofluoric acid while protecting the Low-k film or SiN film.
- Patent 3: The third patent describes a plasma processing apparatus with a roughened adsorption member to enhance the adsorption of by-products released during the plasma process. It includes a processing container, a mounting stage, and an exhaust passage surrounding the stage.
- Patent 4: The fourth patent introduces a plasma processing apparatus that focuses and sorts ions in the plasma to improve efficiency and accuracy. It includes a processing vessel, a plasma forming device, a focusing device, and a sorting device.
- Patent 5: The fifth patent presents a method for substrate processing using a substrate processing apparatus. It involves selecting a polarity modification pattern for electromagnets, generating plasma from a processing gas, and etching the substrate based on the selected pattern.
- Patent 6: The sixth patent describes a substrate processing apparatus with an inner and outer edge ring for aligning and supporting the substrate. It includes a plasma processing chamber, a support, an outer edge ring electrostatic chuck, and a lifter.
- Patent 7: The seventh patent presents a method for processing a substrate using a substrate processing apparatus. It involves plasma processing with a process gas containing fluorocarbon and a rare gas, and repeating the plasma processing in a cycle.
- Patent 8: The eighth patent describes a plasma processing apparatus that uses electromagnetic waves to generate plasma. It includes a waveguide structure with a resonator and a load impedance portion.
- Patent 9: The ninth patent presents a method for performing a plasma process using a signal generator and a plasma chamber. It involves adjusting variable components of a matching circuit based on feedback from an RF signal to sustain the plasma.
- Patent 10: The tenth patent describes a method for processing a substrate in a substrate processing device. It involves performing plasma processing with different plasma generation conditions, including radio-frequency power and processing time.
Notable Applications:
- Estimating warpage amount of a substrate based on image analysis.
- Selective etching of SiO film while protecting Low-k film or SiN film.
- Enhanced adsorption of by-products during plasma processing.
- Improved efficiency and accuracy of plasma processing through ion focusing and sorting.
- Improved efficiency and effectiveness of substrate processing through polarity modification.
- Alignment and support of substrate using inner and outer edge rings.
- Repeated plasma processing with different plasma generation conditions.
- Efficient plasma generation using VHF or UHF waves.
- Sustaining plasma using feedback-based adjustment of matching circuit.
- Plasma processing with different plasma generation conditions for etching target films.
Contents
- 1 Patent applications for Tokyo Electron Limited on November 30th, 2023
- 1.1 SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD (18322855)
- 1.2 SUBSTRATE PROCESSING APPARATUS (18324469)
- 1.3 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18032786)
- 1.4 Systems and Methods for Plasma Process (17804496)
- 1.5 PLASMA PROCESSING APPARATUS (18249552)
- 1.6 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18231278)
- 1.7 SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ALIGNING RING MEMBER (18199401)
- 1.8 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18200910)
- 1.9 PLASMA PROCESSING APPARATUS (18251077)
- 1.10 PLASMA PROCESSING APPARATUS (18232834)
- 1.11 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18248900)
- 1.12 WARPAGE AMOUNT ESTIMATION APPARATUS AND WARPAGE AMOUNT ESTIMATION METHOD (18249630)
Patent applications for Tokyo Electron Limited on November 30th, 2023
SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD (18322855)
Main Inventor
Yoshiki Okamoto
SUBSTRATE PROCESSING APPARATUS (18324469)
Main Inventor
Naoki UMEHARA
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18032786)
Main Inventor
Atsutoshi INOKUCHI
Systems and Methods for Plasma Process (17804496)
Main Inventor
Charles Schlechte
PLASMA PROCESSING APPARATUS (18249552)
Main Inventor
Taro IKEDA
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18231278)
Main Inventor
Satoru NAKAMURA
SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ALIGNING RING MEMBER (18199401)
Main Inventor
Mohd Fairuz BIN BUDIMAN
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18200910)
Main Inventor
Tomohiko NIIZEKI
PLASMA PROCESSING APPARATUS (18251077)
Main Inventor
Tsuyoshi Moriya
PLASMA PROCESSING APPARATUS (18232834)
Main Inventor
Toshimasa KOBAYASHI
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18248900)
Main Inventor
Koji Kagawa
WARPAGE AMOUNT ESTIMATION APPARATUS AND WARPAGE AMOUNT ESTIMATION METHOD (18249630)
Main Inventor
Akiko KIYOTOMI
