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| | ==Patent applications for Tokyo Electron Limited on November 30th, 2023== | | ==Patent applications for Tokyo Electron Limited on November 30th, 2023== |
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| − | ===SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD ([[US Patent Application 18322855. SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD simplified abstract|18322855]])=== | + | ===SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD ([[US Patent Application 18322855. SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD simplified abstract (Tokyo Electron Limited)|18322855]])=== |
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| − | '''Brief explanation'''
| + | ===SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18324469. SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18324469]])=== |
| − | The patent application describes a substrate cleaning apparatus that is used to clean a substrate.
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| − | * The apparatus includes a holder to hold the substrate securely.
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| − | * It also includes a circular ring-shaped body with grooves formed in a radial shape at the top, each groove having a bottom on the body.
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| − | * The top surface of the circular ring-shaped body acts as a sliding surface and is designed to slide on the bottom surface of the substrate.
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| − | * A supporting body is used to support and rotate the circular ring-shaped body in a circular motion.
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| − | * A cleaning liquid supply is provided to allow a cleaning liquid to be absorbed into the circular ring-shaped body.
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| − | * A relatively moving mechanism is used to move the substrate and the supporting body relative to each other while the sliding surface, which has absorbed the cleaning liquid, presses against the bottom surface of the substrate.
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| − | | |
| − | '''Abstract'''
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| − | A substrate cleaning apparatus includes a holder configured to hold a substrate; a circular ring-shaped body; grooves formed in a radial shape at an upper portion of the circular ring-shaped body, each groove having a bottom located on the circular ring-shaped body; a sliding surface which is a top surface of the circular ring-shaped body between the respective grooves, and configured to be slid on a bottom surface of the substrate; a supporting body configured to support and rotate the circular ring-shaped body in a circumferential direction; a cleaning liquid supply configured to allow a cleaning liquid to be absorbed into the circular ring-shaped body; and a relatively moving mechanism configured to move the substrate and the supporting body relative to each other in a state that the sliding surface being rotated and having absorbed the cleaning liquid presses the bottom surface of the substrate.
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| − | | |
| − | ===SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18324469. SUBSTRATE PROCESSING APPARATUS simplified abstract|18324469]])=== | |
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| − | '''Brief explanation'''
| + | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18032786. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18032786]])=== |
| − | The patent application describes a substrate processing apparatus that is used to process substrates in a controlled environment.
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| − | | |
| − | * The apparatus includes a processing container where the substrate is placed on a stage.
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| − | * An exhaust port is arranged around the stage to remove any gases or particles generated during the processing.
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| − | * The stage can be moved up and down between a processing position and a transfer position.
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| − | * A clamp ring is used to cover the peripheral edge of the substrate when it is in the processing position.
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| − | * The clamp ring is supported by a shelf on the sidewall of the processing container when the stage is in the transfer position.
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| − | * A pressure regulating mechanism is included to maintain a balanced pressure between the space above the substrate and the space below the stage.
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| − | | |
| − | '''Abstract'''
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| − | A substrate processing apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; an exhaust port arranged around the stage along an inner wall of the processing container; a driver configured to move the stage up and down between a processing position and a transfer position lower than the processing position; a clamp ring that is arranged on a peripheral edge of the substrate on the stage to cover the peripheral edge of the substrate when the stage is at the processing position, and is supported by a shelf provided on a sidewall of the processing container when the stage is at the transfer position; and a pressure regulating mechanism configured to suppress a pressure difference between a space above the substrate on the stage and a space below the stage.
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| − | | |
| − | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18032786. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract|18032786]])=== | |
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| − | '''Brief explanation'''
| + | ===Systems and Methods for Plasma Process ([[US Patent Application 17804496. Systems and Methods for Plasma Process simplified abstract (Tokyo Electron Limited)|17804496]])=== |
| − | The patent application describes a method for processing a substrate in a substrate processing device. Here are the key points:
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| − | | |
| − | * The method involves supplying a process gas to a processing container containing a stage with a workpiece.
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| − | * The workpiece has an etching target film and a mask on the etching target film.
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| − | * First, a plasma processing is performed on the workpiece using a first plasma generated from the process gas under specific conditions.
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| − | * Then, a second plasma processing is performed on the workpiece using a second plasma generated from the process gas.
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| − | * The second plasma generation condition differs from the first plasma generation condition in terms of radio-frequency power and processing time.
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| − | * However, the second plasma generation condition is the same as the first plasma generation condition in other aspects.
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| − | * The steps of performing plasma processing with the first and second plasma are repeated.
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| − | | |
| − | '''Abstract'''
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| − | A substrate processing method for a substrate processing device includes (a) supplying a process gas with specific conditions to a processing container having therein a stage on which a workpiece having an etching target film and a mask on the etching target film is placed, (b) performing a plasma processing on the workpiece with first plasma generated from the process gas under a first plasma generation condition, (c) performing a plasma processing on the workpiece with second plasma generated from the process gas under a second plasma generation condition that is different from the first plasma generation condition in a radio-frequency power condition and a processing time, and is the same as the first plasma generation condition in other conditions, and (d) repeating (b) and (c).
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| − | | |
| − | ===Systems and Methods for Plasma Process ([[US Patent Application 17804496. Systems and Methods for Plasma Process simplified abstract|17804496]])=== | |
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| − | '''Brief explanation'''
| + | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18249552. PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18249552]])=== |
| − | The patent application describes a method for performing a plasma process using a signal generator and a plasma chamber.
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| − | * The method involves generating a first RF signal at a first frequency using the signal generator.
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| − | * The first RF signal is used to ignite a plasma within the plasma chamber.
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| − | * Variable components of a matching circuit, which connects the signal generator to the plasma chamber, are adjusted based on feedback from the first RF signal.
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| − | * Once the plasma is detected, the signal generator switches to output a third RF signal at the first frequency to sustain the plasma.
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| − | * The matching circuit remains in fixed positions during the plasma process.
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| − | * The sustained plasma is used to process a substrate loaded into the plasma chamber.
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| − | | |
| − | '''Abstract'''
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| − | A method of performing a plasma process includes generating, at an output of a signal generator, a first RF signal at a first frequency. The signal generator is coupled to a plasma chamber through a matching circuit. Based on a feedback from the first RF signal, variable components of the matching circuit are moved to fixed positions. A second RF signal is generated at a second frequency at the output of the signal generator to ignite a plasma within the plasma chamber. In response to detecting the plasma, the signal generator switches to output a third RF signal at the first frequency to sustain the plasma, which is configured to process a substrate loaded into the plasma chamber while holding the matching circuit at the fixed positions.
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| − | | |
| − | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18249552. PLASMA PROCESSING APPARATUS simplified abstract|18249552]])=== | |
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| − | '''Brief explanation'''
| + | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18231278. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18231278]])=== |
| − | The patent application describes a plasma processing apparatus that uses electromagnetic waves to generate plasma within a chamber.
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| − | | |
| − | * The apparatus includes a waveguide structure that is designed to propagate VHF or UHF waves.
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| − | * The waveguide structure includes a resonator, which consists of a first waveguide, a second waveguide, and a load impedance portion.
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| − | * The first waveguide has a specific characteristic impedance, while the second waveguide has a higher characteristic impedance.
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| − | * The second waveguide is terminated at a short-circuit end with a ground potential.
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| − | * The load impedance portion is connected between the first and second waveguides.
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| − | * The higher characteristic impedance of the second waveguide allows for efficient generation of plasma within the chamber.
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| − | | |
| − | '''Abstract'''
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| − | Disclosed is a plasma processing apparatus including a chamber and a waveguide structure. The waveguide structure is configured to propagate electromagnetic waves, which are VHF waves or UHF waves, in order to generate plasma within the chamber. The waveguide structure includes a resonator for electromagnetic waves. The resonator includes a first waveguide, a second waveguide, and a load impedance portion. The first waveguide has a first characteristic impedance. The second waveguide has a second characteristic impedance. The second waveguide is terminated at a short-circuit end having a ground potential. The load impedance portion is connected between the first waveguide and the second waveguide. The second characteristic impedance is greater than the first characteristic impedance.
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| − | | |
| − | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18231278. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract|18231278]])=== | |
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| − | '''Brief explanation'''
| + | ===SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ALIGNING RING MEMBER ([[US Patent Application 18199401. SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ALIGNING RING MEMBER simplified abstract (Tokyo Electron Limited)|18199401]])=== |
| − | The patent application describes a method for processing a substrate using a substrate processing apparatus.
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| − | | |
| − | * The method involves supplying a process gas containing fluorocarbon and a rare gas to a processing container.
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| − | * A processing target object, which includes a first region made of silicon oxide, is placed on a pedestal within the processing container.
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| − | * The processing target object is then plasma-processed using a first plasma generated from the process gas under specific conditions.
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| − | * The processing target object is further plasma-processed with a bias potential generated by a second plasma of the process gas, under different conditions from the first plasma generation.
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| − | * Steps b) and c) are repeated in a cycle.
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| − | | |
| − | '''Abstract'''
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| − | A substrate processing method is a substrate processing method for a substrate processing apparatus. The method includes: a) supplying a process gas containing fluorocarbon and a rare gas to a processing container in which a placing pedestal for placing a processing target object including a first region made of silicon oxide is arranged; b) plasma-processing the processing target object by a first plasma of the process gas generated under a first plasma generation condition; c) plasma-processing the processing target object in which a bias potential is generated on the processing target object by a second plasma of the process gas generated under a second plasma generation condition different from the first plasma generation condition; and d) repeating the b) and the c).
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| − | | |
| − | ===SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ALIGNING RING MEMBER ([[US Patent Application 18199401. SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ALIGNING RING MEMBER simplified abstract|18199401]])=== | |
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| − | '''Brief explanation'''
| + | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18200910. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18200910]])=== |
| − | The patent application describes a substrate processing apparatus used in plasma processing.
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| − | * The apparatus includes a plasma processing chamber and a support inside the chamber.
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| − | * There is an inner edge ring provided around the substrate and an outer edge ring around the inner edge ring.
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| − | * The outer edge ring overlaps with the inner edge ring and has a first alignment portion.
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| − | * An outer edge ring electrostatic chuck is positioned facing the outer edge ring on the support.
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| − | * A lifter is included to move the inner edge ring and/or the outer edge ring up and down.
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| − | * The first alignment portion helps align the inner edge ring with the outer edge ring when the outer edge ring electrostatic chuck is activated and attracts the outer edge ring.
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| − | | |
| − | '''Abstract'''
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| − | There is provided a substrate processing apparatus comprising: a plasma processing chamber; a support accommodated in the plasma processing chamber; an inner edge ring provided around a substrate; an outer edge ring provided around the inner edge ring, the outer edge ring having an inner peripheral portion overlapping an outer peripheral portion of the inner edge ring when viewed from above and having a first alignment portion; an outer edge ring electrostatic chuck disposed at a position of the support, the position facing the outer edge ring; and a lifter configured to move the inner edge ring and/or the outer edge ring up and down. The inner edge ring is configured to be aligned with the outer edge ring by the first alignment portion in a state in which the outer edge ring electrostatic chuck is driven and the outer edge ring is attracted.
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| − | | |
| − | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18200910. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract|18200910]])=== | |
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| − | '''Brief explanation'''
| + | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18251077. PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18251077]])=== |
| − | The patent application describes a method for processing substrates using a substrate processing apparatus.
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| − | * The apparatus includes a chamber, a substrate support, an upper electrode, and a plurality of electromagnets.
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| − | * The method involves selecting a polarity modification pattern for the electromagnets during the etching process.
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| − | * Plasma is generated from a processing gas supplied into the chamber.
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| − | * The substrate is then etched based on the selected polarity modification pattern.
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| − | * The invention aims to improve the efficiency and effectiveness of substrate processing.
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| − | | |
| − | '''Abstract'''
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| − | A substrate processing method includes: providing a substrate processing apparatus including a chamber, a substrate support that supports a substrate in the chamber, an upper electrode facing a center of the substrate, and a plurality of electromagnets arranged radially around the center of the upper electrode; selecting a polarity modification pattern to be used for the plurality of electromagnets during an etching; and generating plasma from a processing gas supplied into the chamber, and etching the substrate based on the polarity modification pattern.
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| − | | |
| − | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18251077. PLASMA PROCESSING APPARATUS simplified abstract|18251077]])=== | |
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| − | '''Brief explanation'''
| + | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18232834. PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18232834]])=== |
| − | The patent application describes a plasma processing apparatus used for plasma processing on a substrate.
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| − | * The apparatus includes a processing vessel where the substrate is placed.
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| − | * A plasma forming device is used to generate plasma within the processing vessel.
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| − | * A focusing device is placed inside the processing vessel and is responsible for concentrating multiple ions in the plasma to create an ion beam.
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| − | * A sorting device is used to separate a specific ion from the ion beam generated by the focusing device.
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| − | * The specific ion is then supplied to the substrate for the plasma processing.
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| − | * The invention aims to improve the efficiency and accuracy of plasma processing by focusing and sorting ions in the plasma.
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| − | | |
| − | '''Abstract'''
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| − | A plasma processing apparatus includes a processing vessel in which a substrate as a target of a plasma processing is disposed; a plasma forming device configured to form plasma within the processing vessel; a focusing device disposed within the processing vessel, and configured to focus multiple ions in the plasma to output an ion beam; and a sorting device configured to sort out, from the ion beam outputted from the focusing device, a specific ion to be supplied to the substrate.
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| − | | |
| − | ===PLASMA PROCESSING APPARATUS ([[US Patent Application 18232834. PLASMA PROCESSING APPARATUS simplified abstract|18232834]])=== | |
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| − | '''Brief explanation'''
| + | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18248900. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)|18248900]])=== |
| − | The patent application describes a plasma processing apparatus that is used for performing a plasma process on a substrate.
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| − | * The apparatus includes a processing container where a mounting stage is provided to hold the substrate during the plasma process.
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| − | * An exhaust passage is also included, which surrounds the mounting stage and allows the gas containing by-products from the plasma process to flow out.
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| − | * The apparatus further includes a first adsorption member, which is positioned along the inner wall surface of the exhaust passage.
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| − | * The surface of the first adsorption member is roughened to enhance its ability to adsorb the by-products released during the plasma process.
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| − | | |
| − | '''Abstract'''
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| − | A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.
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| − | | |
| − | ===SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS ([[US Patent Application 18248900. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract|18248900]])=== | |
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| − | '''Brief explanation'''
| + | ===WARPAGE AMOUNT ESTIMATION APPARATUS AND WARPAGE AMOUNT ESTIMATION METHOD ([[US Patent Application 18249630. WARPAGE AMOUNT ESTIMATION APPARATUS AND WARPAGE AMOUNT ESTIMATION METHOD simplified abstract (Tokyo Electron Limited)|18249630]])=== |
| − | The patent application describes a method for processing a substrate with a SiO film and a Low-k film or a SiN film exposed on its surface. The method involves the following steps:
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| − | | |
| − | * The substrate is prepared with the SiO film and the Low-k film or SiN film exposed.
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| − | * The Low-k film or SiN film is exposed to oxygen plasma.
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| − | * An organic compound, specifically a self-assembled monolayer (SAM) material, is supplied to the surface of the substrate to form a protective film on the Low-k film or SiN film.
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| − | * Hydrofluoric acid is supplied to the surface of the substrate to etch the SiO film.
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| − | * The protective film inhibits the etching of the Low-k film or SiN film caused by the hydrofluoric acid.
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| − | | |
| − | This method allows for selective etching of the SiO film while protecting the Low-k film or SiN film, which can be useful in various substrate processing applications.
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| − | | |
| − | '''Abstract'''
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| − | A substrate processing method includes (A) to (C) described below. (A) A substrate having a surface in which a SiO film and a Low-k film or a SiN film are exposed is preprared. The Low-k film or the SiN film is exposed to oxygen plasma. (B) A protective film is formed on the Low-k film or the SiN film by supplying an organic compound (self-assembled monolayer (SAM) material) configured to form a SAM to the surface of the substrate. (C) The SiO film is etched by supplying hydrofluoric acid to the surface of the substrate while inhibiting etching of the Low-k film or the SiN film caused by the hydrofluoric acid with the protective film.
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| − | | |
| − | ===WARPAGE AMOUNT ESTIMATION APPARATUS AND WARPAGE AMOUNT ESTIMATION METHOD ([[US Patent Application 18249630. WARPAGE AMOUNT ESTIMATION APPARATUS AND WARPAGE AMOUNT ESTIMATION METHOD simplified abstract|18249630]])=== | |
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| | Akiko KIYOTOMI | | Akiko KIYOTOMI |
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| − |
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| − | '''Brief explanation'''
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| − | The patent application describes an apparatus for estimating the warpage amount of a substrate.
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| − | * The apparatus includes an acquirer that captures an image of one surface of the substrate.
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| − | * A calculator is used to calculate the rate of change in pixel value in the captured image along the radial direction of the substrate.
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| − | * An estimator then uses a pre-determined correlation between the rate of change in pixel value and the warpage amount of the substrate to estimate the warpage amount.
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| − | * The estimation is based on the calculation result obtained by the calculator.
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| − |
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| − | '''Abstract'''
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| − | A warpage amount estimation apparatus for estimating a warpage amount of a substrate, includes: an acquirer configured to acquire a captured image of one surface of an estimation target substrate; a calculator configured to calculate a rate of change in pixel value relating to a substrate radial direction in the captured image of the one surface of the estimation target substrate; and an estimator configured to estimate a warpage amount of the estimation target substrate based on a correlation obtained in advance between a rate of change in pixel value relating to the substrate radial direction in a captured image of the one surface of a substrate and a warpage amount of the substrate, and on a calculation result by the calculator.
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Summary of the patent applications from Tokyo Electron Limited on November 30th, 2023
Tokyo Electron Limited has recently filed several patents related to substrate processing and plasma processing apparatus. These patents aim to improve the efficiency, accuracy, and selectivity of various substrate processing techniques.
Summary:
- Patent 1: The first patent describes an apparatus for estimating the warpage amount of a substrate. It includes an acquirer to capture an image of the substrate's surface, a calculator to calculate the rate of change in pixel value along the radial direction of the substrate, and an estimator to estimate the warpage amount based on a pre-determined correlation.
- Patent 2: The second patent presents a method for processing a substrate with a SiO film and a Low-k film or SiN film. It involves exposing the Low-k film or SiN film to oxygen plasma, applying a self-assembled monolayer (SAM) material to form a protective film, and etching the SiO film with hydrofluoric acid while protecting the Low-k film or SiN film.
- Patent 3: The third patent describes a plasma processing apparatus with a roughened adsorption member to enhance the adsorption of by-products released during the plasma process. It includes a processing container, a mounting stage, and an exhaust passage surrounding the stage.
- Patent 4: The fourth patent introduces a plasma processing apparatus that focuses and sorts ions in the plasma to improve efficiency and accuracy. It includes a processing vessel, a plasma forming device, a focusing device, and a sorting device.
- Patent 5: The fifth patent presents a method for substrate processing using a substrate processing apparatus. It involves selecting a polarity modification pattern for electromagnets, generating plasma from a processing gas, and etching the substrate based on the selected pattern.
- Patent 6: The sixth patent describes a substrate processing apparatus with an inner and outer edge ring for aligning and supporting the substrate. It includes a plasma processing chamber, a support, an outer edge ring electrostatic chuck, and a lifter.
- Patent 7: The seventh patent presents a method for processing a substrate using a substrate processing apparatus. It involves plasma processing with a process gas containing fluorocarbon and a rare gas, and repeating the plasma processing in a cycle.
- Patent 8: The eighth patent describes a plasma processing apparatus that uses electromagnetic waves to generate plasma. It includes a waveguide structure with a resonator and a load impedance portion.
- Patent 9: The ninth patent presents a method for performing a plasma process using a signal generator and a plasma chamber. It involves adjusting variable components of a matching circuit based on feedback from an RF signal to sustain the plasma.
- Patent 10: The tenth patent describes a method for processing a substrate in a substrate processing device. It involves performing plasma processing with different plasma generation conditions, including radio-frequency power and processing time.
Notable Applications:
- Estimating warpage amount of a substrate based on image analysis.
- Selective etching of SiO film while protecting Low-k film or SiN film.
- Enhanced adsorption of by-products during plasma processing.
- Improved efficiency and accuracy of plasma processing through ion focusing and sorting.
- Improved efficiency and effectiveness of substrate processing through polarity modification.
- Alignment and support of substrate using inner and outer edge rings.
- Repeated plasma processing with different plasma generation conditions.
- Efficient plasma generation using VHF or UHF waves.
- Sustaining plasma using feedback-based adjustment of matching circuit.
- Plasma processing with different plasma generation conditions for etching target films.
Patent applications for Tokyo Electron Limited on November 30th, 2023
SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD (18322855)
Main Inventor
Yoshiki Okamoto
SUBSTRATE PROCESSING APPARATUS (18324469)
Main Inventor
Naoki UMEHARA
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18032786)
Main Inventor
Atsutoshi INOKUCHI
Systems and Methods for Plasma Process (17804496)
Main Inventor
Charles Schlechte
PLASMA PROCESSING APPARATUS (18249552)
Main Inventor
Taro IKEDA
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18231278)
Main Inventor
Satoru NAKAMURA
SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ALIGNING RING MEMBER (18199401)
Main Inventor
Mohd Fairuz BIN BUDIMAN
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18200910)
Main Inventor
Tomohiko NIIZEKI
PLASMA PROCESSING APPARATUS (18251077)
Main Inventor
Tsuyoshi Moriya
PLASMA PROCESSING APPARATUS (18232834)
Main Inventor
Toshimasa KOBAYASHI
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (18248900)
Main Inventor
Koji Kagawa
WARPAGE AMOUNT ESTIMATION APPARATUS AND WARPAGE AMOUNT ESTIMATION METHOD (18249630)
Main Inventor
Akiko KIYOTOMI
