Texas instruments incorporated (20240113217). TRENCH SHIELDED TRANSISTOR simplified abstract

TRENCH SHIELDED TRANSISTOR

Organization Name

texas instruments incorporated

Inventor(s)

Hong Yang of Wylie TX (US)

Thomas Grebs of Bethlehem PA (US)

Yunlong Liu of Chengdu (CN)

Sunglyong Kim of Allen TX (US)

Lindong Li of Chengdu (SC)

Peng Li of Chongqing (CN)

Seetharaman Sridhar of Richardson TX (US)

Yeguang Zhang of Chengdu (SC)

Sheng pin Yang of Chengdu (SC)

TRENCH SHIELDED TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113217 titled 'TRENCH SHIELDED TRANSISTOR

Simplified Explanation

An integrated circuit includes first and second trenches in a semiconductor substrate and a semiconductor mesa between the first and second trenches. A source region and a body region are located within the semiconductor mesa. A trench shield and a gate electrode are also included in the structure.

• The integrated circuit includes first and second trenches in a semiconductor substrate.
• A semiconductor mesa is located between the first and second trenches.
• A source region with a first conductivity type and a body region with an opposite second conductivity type are within the semiconductor mesa.
• A trench shield is located within the first trench.
• A gate electrode is positioned over the trench shield between the first and second sidewalls of the first trench.
• A gate dielectric is on a sidewall of the first trench between the gate electrode and the body region.
• A pre-metal dielectric (PMD) layer is over the gate electrode.
• A gate contact through the PMD layer touches the gate electrode between the first and second sidewalls.
• A trench shield contact through the PMD layer touches the trench shield between the first and second sidewalls.

Potential Applications

This technology could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.

Problems Solved

This technology helps in improving the performance and efficiency of integrated circuits by optimizing the layout and design of the components within the semiconductor substrate.

Benefits

The integrated circuit design described in the patent application offers enhanced functionality, increased speed, and reduced power consumption compared to traditional designs.

Potential Commercial Applications

The technology could find commercial applications in the semiconductor industry for manufacturing high-performance integrated circuits for consumer electronics, automotive systems, and industrial equipment.

Possible Prior Art

One possible prior art for this technology could be the use of trench structures in semiconductor devices to improve performance and reduce parasitic effects.

How does this technology compare to existing integrated circuit designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing integrated circuit designs to evaluate the performance and efficiency improvements offered by the new technology.

What are the specific manufacturing processes involved in creating the integrated circuit described in the patent application?

The article does not delve into the detailed manufacturing processes involved in producing the integrated circuit, which could be crucial for understanding the feasibility and scalability of the technology.

Original Abstract Submitted

an integrated circuit includes first and second trenches in a semiconductor substrate and a semiconductor mesa between the first and second trenches. a source region having a first conductivity type and a body region having an opposite second conductivity type are located within the semiconductor mesa. a trench shield is located within the first trench, and a gate electrode is over the trench shield between first and second sidewalls of the first trench. a gate dielectric is on a sidewall of the first trench between the gate electrode and the body region, and a pre-metal dielectric (pmd) layer is over the gate electrode. a gate contact through the pmd layer touches the gate electrode between the first and second sidewalls, and a trench shield contact through the pmd layer touches the trench shield between the first and second sidewalls.